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Audunn Ludviksson

from Seattle, WA
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Also known as:
N N, Ludviksson Audunn
Related to:
Gerry Saba, 57Nancy R Floyd, 81Megan Saba, 27Augusto S Saba, 52Kenneth J Barnett, 60
Connected to:
Georg Ludviksson, 48Megan R Ludwa, 34Beth A Ludwick, 44Chanda Ludwick, 49Dan L Ludwick, 88Hannah Ludwick, 30Heather L Ludwick, 45Jared Ludwick, 34Jason T Ludwick, 49Jon C Ludwick, 52

Audunn Ludviksson Phones & Addresses

  • Seattle, WA
  • 11550 Desert Holly Dr, Scottsdale, AZ 85255
  • 8245 Raintree Dr, Albuquerque, NM 87122 (505) 856-9069
  • Santa Barbara, CA
  • Maricopa, AZ
  • Gilbert, AZ
  • 6003 1St Ave NE, Seattle, WA 98115

Work

Position: Clerical/White Collar

Education

Degree: High school graduate or higher

Resumes

Resumes

Audunn Ludviksson Photo 1

Patent Agent

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Location:
Seattle, WA
Industry:
Semiconductors
Work:
Tokyo Electron
Patent Agent
Audunn Ludviksson Photo 2

Patent Agent

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Location:
Seattle, WA
Industry:
Semiconductors
Work:
Tokyo Electron
Patent Agent

Publications

Us Patents

Method For Depositing Conformal Nitrified Tantalum Silicide Films By Thermal Cvd

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US Patent:
6586330, Jul 1, 2003
Filed:
May 7, 2002
Appl. No.:
10/140538
Inventors:
Audunn Ludviksson - Scottsdale AZ
Joseph T. Hillman - Scottsdale AZ
Assignee:
Tokyo Electron Limited - Tokyo
International Classification:
H01L 214763
US Classification:
438643, 438653, 438680, 438683, 438685
Abstract:
Method for depositing a nitrified tantalum silicide barrier film on a semiconductor device including a silicon-based substrate with recessed features by low temperature thermal CVD of tantalum silicide and subsequent nitrification. The nitrified tantalum silicide barrier film exhibits high conformality and low fluorine or chlorine impurity content. A specific embodiment of the method includes depositing tantalum silicide by TCVD from the reaction of a TaF or TaCl precursor vapor with silane gas on a 250Â C. -450Â C. heated substrate, then exposing the tantalum silicide to a thermal NH treatment or an NH â or N -containing plasma treatment.

Monitoring Material Buildup On System Components By Optical Emission

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US Patent:
6806949, Oct 19, 2004
Filed:
Dec 31, 2002
Appl. No.:
10/331349
Inventors:
Audunn Ludviksson - Scottsdale AZ
Eric J. Strang - Chandler AZ
Assignee:
Tokyo Electron Limited - Tokyo
International Classification:
G01N 2100
US Classification:
356 72, 356316, 356632, 118713, 427 9, 2504581
Abstract:
A method and system are provided for monitoring material buildup on system components in a plasma processing system. The system components contain emitters that are capable of producing characteristic fluorescent light emission when exposed to a plasma. The method utilizes optical emission to monitor fluorescent light emission from the emitters for determining system component status. The method can evaluate material buildup on system components in a plasma, by monitoring fluorescent light emission from the emitters. Consumable system components that can be monitored using the method include rings, shields, electrodes, baffles, and liners.

Glass Powders, Methods For Producing Glass Powders And Devices Fabricated From Same

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US Patent:
6866929, Mar 15, 2005
Filed:
Dec 21, 2001
Appl. No.:
10/032298
Inventors:
Toivo T. Kodas - Albuquerque NM, US
Mark J. Hampden-Smith - Albuquerque NM, US
James Caruso - Albuquerque NM, US
Quint H. Powell - Albuquerque NM, US
Audunn Ludviksson - Albuquerque NM, US
Assignee:
Cabot Corporation - Boston MA
International Classification:
B32B019/00
B32B015/02
C03C003/00
C03C006/02
C03C014/00
US Classification:
428357, 428402, 501 11, 501 27, 501 32
Abstract:
Glass powders and methods for producing glass powders. The powders preferably have a small particle size, narrow size distribution and a spherical morphology. The method includes forming the particles by a spray pyrolysis technique. The invention also includes novel devices and products formed from the glass powders.

Monitoring Erosion Of System Components By Optical Emission

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US Patent:
6894769, May 17, 2005
Filed:
Dec 31, 2002
Appl. No.:
10/331456
Inventors:
Audunn Ludviksson - Scottsdale AZ, US
Eric J. Strang - Chandler AZ, US
Assignee:
Tokyo Electron Limited - Tokyo
International Classification:
G01J003/30
G01N021/64
US Classification:
356 72, 356316, 2504591
Abstract:
A method and system are provided for monitoring erosion of system components in a plasma processing system. The system components contain emitters that are capable of producing characteristic fluorescent light emission when exposed to a plasma. The method utilizes optical emission to monitor fluorescent light emission from the emitters for determining system component status. The method can evaluate erosion of system components in a plasma, by monitoring fluorescent light emission from the emitters. Consumable system components that can be monitored using the method include rings, shields, electrodes, baffles, and liners.

Method Of Using A Sensor Gas To Determine Erosion Level Of Consumable System Components

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US Patent:
7064812, Jun 20, 2006
Filed:
Aug 19, 2003
Appl. No.:
10/642621
Inventors:
Audunn Ludviksson - Scottsdale AZ, US
Steven T. Fink - Mesa AZ, US
Assignee:
Tokyo Electron Limited - Tokyo
International Classification:
G01N 21/00
US Classification:
356 72, 356316, 250282
Abstract:
A method and system are provided for monitoring erosion of system components in a plasma processing system. The system components contain a gas emitter that can release a sensor gas into a plasma process environment. The sensor gas can produce characteristic fluorescent light emission when exposed to a plasma. The method can evaluate erosion of system components in a plasma, by monitoring fluorescent light emission and a mass signal from the sensor gas. Consumable system components that can be monitored using the method include rings, shields, electrodes, baffles, and liners.

Process Monitoring Using Infrared Optical Diagnostics

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US Patent:
7102132, Sep 5, 2006
Filed:
Mar 17, 2003
Appl. No.:
10/507201
Inventors:
Audunn Ludviksson - Scottsdale AZ, US
Assignee:
Tokyo Electron Limited - Tokyo
International Classification:
G01N 21/35
US Classification:
250343, 2503414, 25033913
Abstract:
A method and apparatus for real-time monitoring of the substrate and the gaseous process environment in a semi-conductor process step is described. The method uses infrared spectroscopy for in-situ analysis of gaseous molecular species in the process region and characterization of adsorbed chemical species on a substrate. The process monitoring can be applied to endpoint- and fault detection in etching and deposition processes, in addition to chamber cleaning and chamber condition steps.

Method And System For Etching High-K Dielectric Materials

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US Patent:
7202169, Apr 10, 2007
Filed:
Sep 26, 2003
Appl. No.:
10/670795
Inventors:
Lee Chen - Austin TX, US
Audunn Ludviksson - Scottsdale AZ, US
Assignee:
Tokyo Electron Limited - Tokyo
International Classification:
H01F 21/302
US Classification:
438689, 438722
Abstract:
A system and a method to remove a layer of high-k dielectric material during the manufacturing of an integrated circuit. In one embodiment of the invention, an etch reactant is employed to form volatile etch products when reacted with high-k layers. Alternately, high-k layers can be anisotropically etched of in accordance with a patterned photoresist or hard mask, where a hyperthermal beam of neutral atoms is used to aid in the reaction of an etch reactant with a high-k layer. Alternately, a hyperthermal beam of neutral atoms or a plasma treatment can used to modify a high-k layer, and subsequently etch the modified high-k layer utilizing an etch reactant that reacts with the modified high-k layer. In still another embodiment of the invention, the hyperthermal beam of neutral atoms is used to etch a high-k layer through physical bombardment of the high-k layer.

Anisotropic Dry Etching Of Cu-Containing Layers

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US Patent:
7214327, May 8, 2007
Filed:
Jun 27, 2003
Appl. No.:
10/517764
Inventors:
Lee Chen - Ceder Creek TX, US
Audunn Ludviksson - Scottsdale AZ, US
Assignee:
Tokyo Electron Limited - Tokyo
International Classification:
C23F 1/02
US Classification:
216 62, 216 78
Abstract:
A method and apparatus for dry etching pure Cu and Cu-containing layers () for manufacturing integrated circuits. The invention uses a directional beam of O-atoms with high kinetic energy () to oxidize the Cu and Cu-containing layers, and etching reagents () that react with the oxidized Cu () to form volatile Cu-containing etch products (). The invention allows for low-temperature, anisotropic etching of pure Cu and Cu-containing layers in accordance with a patterned hard mask or photoresist ().
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Audunn Ludviksson from Seattle, WA Get Report