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Atul M Athalye

from San Marcos, CA
Age ~59
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Also known as:
Mohana A Athalye, Mohana J Athalye, Aful M Athalye
Phone and address:
1467 Rivercrest Rd, San Marcos, CA 92078
(760) 471-8522
Connected to:
Radhika Athalye, 34Sneha K Athalye, 40Aufer Atham, 51Eleftheria Athan, 74Lisa A Athan, 34Robert A Athan, 71Ellen M Athanail, 67Alex A Athanassiou, 78Alexandra Athanassiou, 82Angela R Athanasakos, 59

Atul Athalye Phones & Addresses

  • 1467 Rivercrest Rd, San Marcos, CA 92078 (760) 471-8522
  • 2096 Maple View Ct, Scotch Plains, NJ 07076
  • Chatham, NJ
  • Madison, WI
  • Westfield, NJ
  • Mountainside, NJ
  • San Diego, CA
  • Union, NJ

Work

Company: Boc south pacific Jul 2003 to Dec 2006 Position: Director of technology - electronic materials

Education

Degree: Doctorates, Doctor of Philosophy School / High School: University of Wisconsin - Madison 1986 to 1993 Specialities: Chemical Engineering, Philosophy

Skills

Process Engineering • Chemical Engineering • R&D • Process Simulation • Product Development • Cross Functional Team Leadership • Materials Science • Electronics • Semiconductors • Chemistry • Commercialization • Materials • Thin Films

Languages

English

Interests

Football • Exercise • Sweepstakes • Home Improvement • Reading • Gourmet Cooking • Sports • Home Decoration • Watching Sports • Photograph • Collecting Coins • Cooking • Electronics • Outdoors • Baseball • Crafts • Fitness • Music • Movies • Collecting • Kids • Diet • Walking • Travel • Watching Baseball • Investing • Traveling • International Traavel • Self Improvement • Watching Football

Industries

Chemicals

Resumes

Resumes

Atul Athalye Photo 1

Director Of Technology - Electronic Materials

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Location:
1467 Rivercrest Rd, San Marcos, CA 92078
Industry:
Chemicals
Work:
Boc South Pacific Jul 2003 - Dec 2006
Director of Technology - Electronic Materials
Edwards 2003 - 2006
Director of Technology - Electronic Materials
Boc 1993 - 2006
Various Technical Positions
The Linde Group 1993 - 2006
Director of Technology - Electronic Materials
Education:
University of Wisconsin - Madison 1986 - 1993
Doctorates, Doctor of Philosophy, Chemical Engineering, Philosophy Indian Institute of Technology, Bombay 1982 - 1986
Bachelors, Bachelor of Technology, Chemical Engineering
Skills:
Process Engineering
Chemical Engineering
R&D
Process Simulation
Product Development
Cross Functional Team Leadership
Materials Science
Electronics
Semiconductors
Chemistry
Commercialization
Materials
Thin Films
Interests:
Football
Exercise
Sweepstakes
Home Improvement
Reading
Gourmet Cooking
Sports
Home Decoration
Watching Sports
Photograph
Collecting Coins
Cooking
Electronics
Outdoors
Baseball
Crafts
Fitness
Music
Movies
Collecting
Kids
Diet
Walking
Travel
Watching Baseball
Investing
Traveling
International Traavel
Self Improvement
Watching Football
Languages:
English

Business Records

Name / Title
Company / Classification
Phones & Addresses
Atul Athalye
Manager
Linde LLC
Research & Development
1970 Diamond St, San Marcos, CA 92078
(760) 471-2900

Publications

Us Patents

Low-Volatility Compounds For Use In Forming Deposited Layers

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US Patent:
20110048283, Mar 3, 2011
Filed:
Jul 15, 2008
Appl. No.:
12/671594
Inventors:
Kenneth Aitchison - Los Gatos CA, US
Atul Athalye - San Marcos CA, US
Ce Ma - San Diego CA, US
International Classification:
C09D 1/00
US Classification:
10628721
Abstract:
The present invention relates to the use of low-volatility compounds in forming deposited layers and to methods for accomplishing such deposition. Particular applicability is in the field of depositing layers for semiconductor devices. A solution made up of low vapor pressure solutes (source materials) and solvents, wherein the solvents have a vapor pressure several orders of magnitude lower than that of the solute is described. The solutions are introduced to a vaporization apparatus configured to enable rapid and efficient vaporization of the solute with minimum evaporation of solvent and minimum decomposition of solute.

Low-Volatility Compounds For Use In Forming Deposited Layers

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US Patent:
20130125788, May 23, 2013
Filed:
Jan 11, 2013
Appl. No.:
13/739369
Inventors:
Kenneth AITCHISON - Los Gatos CA, US
Atul ATHALYE - San Marcos CA, US
Ce MA - San Diego CA, US
International Classification:
C09D 1/00
US Classification:
10628719
Abstract:
The present invention relates to the use of low-volatility compounds in forming deposited layers and to methods for accomplishing such deposition. Particular applicability is in the field of depositing layers for semiconductor devices. A solution made up of low vapor pressure solutes (source materials) and solvents, wherein the solvents have a vapor pressure several orders of magnitude lower than that of the solute is described. The solutions are introduced to a vaporization apparatus configured to enable rapid and efficient vaporization of the solute with minimum evaporation of solvent and minimum decomposition of solute.

Gas Injection Apparatus And Method Having Application To Gold Leaching

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US Patent:
56457715, Jul 8, 1997
Filed:
Sep 21, 1995
Appl. No.:
8/531988
Inventors:
Rustam H. Sethna - New Brunswick NJ
Atul M. Athalye - Chatham NJ
Michael K. Sahm - Annendale NJ
Assignee:
The BOC Group, Inc. - New Providence NJ
International Classification:
B01F 304
US Classification:
261123
Abstract:
A gas injection apparatus for injecting a gas into a liquid comprising a baffle plate, a re-circulation chamber, and a discharge nozzle. The discharge nozzle is oriented normally to the baffle plate so that a liquid stream composed of the liquid is directed against the baffle plate and produces an oppositely directed flow towards the outer peripheral edge of the baffle plate. The oppositely directed flow has a sheet-like turbulent flow regime located adjacent to the plate and a circulating flow regime located above the turbulent flow regime and bounded by a re-circulation chamber. The gas is mixed into the liquid so that smaller bubbles are entrained in the turbulent flow regime and are discharged with the liquid flowing in the turbulent flow regime from the outer peripheral edge of the baffle plate. Larger bubbles flow into the circulating flow regime to break up into smaller bubbles which are entrained in the turbulent flow regime swept out of the apparatus. The apparatus is particularly useful in a gold leaching process in which the gold slurry is thickened to produce clarified water.

Multi-Component Recovery Apparatus And Method

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US Patent:
57995095, Sep 1, 1998
Filed:
Aug 22, 1997
Appl. No.:
8/916454
Inventors:
Steven J. Finley - Wayne NJ
Piotr J. Sadkowski - Bridgewater NJ
Atul M. Athalye - Chatham NJ
Assignee:
The BOC Group, Inc. - New Providence NJ
International Classification:
F25J 100
US Classification:
62638
Abstract:
An apparatus and method for recovering one or more components from the vapor feed in which the component is recovered from the vapor feed at a lower pressure within a lower pressure cold trap. Thereafter, a higher pressure cold trap is connected to the lower pressure cold trap and the component revaporizes in the lower pressure cold trap and resolidifies in the higher pressure cold trap. The higher pressure cold trap is then isolated and the component is allowed to thaw to build up a vapor pressure such that the component can be delivered for recovery at a high pressure. Two or more components having higher and lower boiling points can be recovered by low pressure cold traps set in series. Low pressure cold traps can be provided to operate in an out of phase relationship so that components are frozen on one set of lower pressure cold traps while being vaporized from the other set of cold traps. In the case of two component recovery, two high pressure cold traps are provided to allow two components to vaporize and thus develop a sufficient vapor pressure to be delivered at the requisite delivery pressure.

Method Of Processing Semiconductor Manufacturing Exhaust Gases

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US Patent:
60173823, Jan 25, 2000
Filed:
Mar 30, 1998
Appl. No.:
9/050259
Inventors:
Wenchang Ji - Doylestown PA
Dongmin Shen - Chatham NJ
Ravi Jain - Bridgewater NJ
Arthur I. Shirley - Piscataway NJ
Atul M. Athalye - Chatham NJ
Piotr J. Sadkowski - Bridgewater NJ
Assignee:
The BOC Group, Inc. - New Providence NJ
International Classification:
B01D 53047
US Classification:
95103
Abstract:
A method of processing semiconductor manufacturing exhaust gases for recovering at least hexafluoroethane in which a feed stream composed of the exhaust gases is passed through an adsorbent bed selected to adsorb oxygen, and also nitrogen if present, but not to appreciably adsorb the hexafluoroethane. As a result, a product stream, discharged from the adsorbent bed, has a higher concentration of hexafluoroethane than in the feed stream. In one embodiment, only a single adsorbent such as carbon molecular sieve is provided to adsorb the oxygen or a modified 4A zeolite could be used to adsorb both oxygen and nitrogen. When nitrogen is a potential constituent, layers of carbon molecular sieve and zeolite are provided to adsorb the oxygen and then the nitrogen, respectively. A third adsorbent, preferably 5A zeolite may be provided in addition to the foregoing two adsorbents to also adsorb any carbon tetrafluoride produced as a by-product.

Gas Injection Apparatus And Method

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US Patent:
55473474, Aug 20, 1996
Filed:
Sep 21, 1995
Appl. No.:
8/531987
Inventors:
Rustam H. Sethna - New Brunswick NJ
Atul M. Athalye - Chatham NJ
Assignee:
The BOC Group, Inc. - New Providence NJ
International Classification:
F04B 2500
US Classification:
417250
Abstract:
An apparatus and method for dispersing a gas in a liquid and for increasing gas pressure of a gas from a supply pressure to a delivery pressure. A first pump pumps the liquid to produce a pressurized liquid stream. The gas is injected into the pressurized liquid stream through for instance, a piping tee. The gas injection produces a pressure drop within the gas and as a result, the first pump pumps the liquid stream so that it has a static pressure no greater than the injection pressure. A second pump pumps the resultant pressurized gas-liquid stream so that an outlet liquid stream is produced with the liquid having a greater head than that of the pressurized liquid stream and the gas having the increased delivery pressure.

Method And Apparatus For Purifying Ammonia

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US Patent:
6065306, May 23, 2000
Filed:
May 19, 1998
Appl. No.:
9/081381
Inventors:
Wenchang Ji - Doylestown PA
Arthur I. Shirley - Piscataway NJ
Atul M. Athalye - Chatham NJ
Piotr J. Sadkowski - Bridgewater NJ
Assignee:
The BOC Group, Inc. - New Providence NJ
International Classification:
F25J 100
US Classification:
62624
Abstract:
Ammonia is purified by a membrane unit to concentrate ammonia and/or ammonia and moisture. Moisture is removed in a temperature-swing adsorption unit. The resultant product of such purification is then partially condensed to remove light components of other impurities and then partially vaporized to produce a pressurized ammonia product lean in heavy components. If the feed stream is processed through the membrane unit first, the permeate stream will be lean in such impurities as carbon dioxide, nitrogen and methane. Moisture and any carbon dioxide not removed in the membrane unit is then removed by the adsorption unit. The resultant stream produced by action of the membrane and adsorption units is then partially condensed to produce a liquid lean in light impurities. Such liquid is then partially vaporized within a product pressure vessel to produce ammonia vapor lean in heavy impurities and at a required operational pressure.

Method For Pretreating And Recovering A Rare Gas From A Gas Contaminant Stream Exiting An Etch Chamber

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US Patent:
20220363540, Nov 17, 2022
Filed:
Dec 16, 2021
Appl. No.:
17/552869
Inventors:
Jennifer Bugayong Luna - Lancaster NY, US
Atul M. Athalye - San Marcos CA, US
Ce Ma - Apex NC, US
Ashwini K. Sinha - East Amherst NY, US
International Classification:
C01B 23/00
B01D 53/00
B01D 53/14
B01D 53/04
Abstract:
Novel methods for pretreating a rare-gas-containing stream exiting an etch chamber followed by recovering the rare gas from the pre-treated, rare-gas containing stream are disclosed. More particularly, the invention relates to the pretreatment and recovery of a rare gas, such as xenon or krypton, from a nitrogen-based exhaust stream with specific gaseous impurities generated during an etch process that is performed as part of a semiconductor fabrication process.
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Atul M Athalye from San Marcos, CA, age ~59 Get Report