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Atif M Noori

from San Carlos, CA
Age ~46
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Also known as:
Salman M Noori, Taj Q Noori, Atif M Nouri, Tammy Shuler
Related to:
Ozzie Nageer, 50Qamar M Noori, 80Salman Noori, 46Asma MerchantFarah Y Merchant, 54Anisa M Nageer, 41Faisal Y Merchant, 58Mohammed Y Merchant, 88Taj Q Noori, 78Qamar M NooriSarah MerchantEmad Merchant, 30Saima T Ahmed, 52Raheel Y Merchant, 60
Connected to:
Aziza Noori, 92Babak A Noori, 39Ebrahim Noori, 67Farzad Noori, 56Haroon Noori, 38Hasina Noori, 52Jahid Noori, 33Jamil A Noori, 56Javed Noori, 36Lila Noori, 34

Atif Noori Phones & Addresses

  • San Carlos, CA
  • 3516 Orinda Dr, San Mateo, CA 94403
  • Lafayette, CA
  • San Francisco, CA
  • 18721 Hanna Dr, Cupertino, CA 95014
  • Santa Monica, CA
  • Los Angeles, CA
  • Saratoga, CA

Publications

Us Patents

Method Of Forming A Non-Volatile Memory Having A Silicon Nitride Charge Trap Layer

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US Patent:
8252653, Aug 28, 2012
Filed:
Oct 21, 2008
Appl. No.:
12/255617
Inventors:
Mihaela Balseanu - Sunnyvale CA, US
Vladimir Zubkov - Mountain View CA, US
Li-Qun Xia - Cupertino CA, US
Atif Noori - Saratoga CA, US
Reza Arghavani - Scotts Valley CA, US
Derek R. Witty - Fremont CA, US
Amir Al-Bayati - San Jose CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 21/336
H01L 21/3205
H01L 21/4763
H01L 21/31
H01L 21/469
H01L 29/792
H01L 29/66
US Classification:
438287, 438257, 438261, 438289, 438591, 438783, 438791, 257324, 257325, 257E29309, 257E21243
Abstract:
A flash memory device and methods of forming a flash memory device are provided. The flash memory device includes a doped silicon nitride layer having a dopant comprising carbon, boron or oxygen. The doped silicon nitride layer generates a higher number and higher concentration of nitrogen and silicon dangling bonds in the layer and provides an increase in charge holding capacity and charge retention time of the unit cell of a non-volatile memory device.

Method Of Forming Flash Memory With Ultraviolet Treatment

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US Patent:
8501568, Aug 6, 2013
Filed:
Oct 22, 2008
Appl. No.:
12/256173
Inventors:
Mihaela Balseanu - Sunnyvale CA, US
Vladimir Zubkov - Mountain View CA, US
Li-Qun Xia - Cupertino CA, US
Atif Noori - Saratoga CA, US
Reza Arghavani - Scotts Valley CA, US
Derek R. Witty - Fremont CA, US
Amir Al-Bayati - San Jose CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 21/326
H01L 21/8238
H01L 21/3205
H01L 21/4763
H01L 21/00
H01L 29/792
US Classification:
438287, 438216, 438591, 438795, 257324
Abstract:
A methods of forming a flash memory device are provided. The flash memory device comprises a silicon dioxide layer on a substrate and a silicon nitride layer that is formed on the silicon dioxide layer. The properties of the silicon nitride layer can be modified by any of: exposing the silicon nitride layer to ultraviolet radiation, exposing the silicon nitride layer to an electron beam, and by plasma treating the silicon nitride layer. A dielectric material is deposited on the silicon nitride layer and a conductive date is formed over the dielectric material. The flash memory device with modified silicon nitride layer provides an increase in charge holding capacity and charge retention time of the unit cell of a non-volatile memory device.

Doping Aluminum In Tantalum Silicide

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US Patent:
8592305, Nov 26, 2013
Filed:
Nov 15, 2011
Appl. No.:
13/296715
Inventors:
Xinliang Lu - Fremont CA, US
Seshadri Ganguli - Sunnyvale CA, US
Shih Chung Chen - Cupertino CA, US
Atif Noori - Saratoga CA, US
Maitreyee Mahajani - Saratoga CA, US
Mei Chang - Saratoga CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 21/4763
US Classification:
438649, 438683, 257E212
Abstract:
Provided are methods of providing aluminum-doped TaSifilms. Doping TaSifilms allows for the tuning of the work function value to make the TaSifilm better suited as an N-metal for NMOS applications. One such method relates to soaking a TaSifilm with an aluminum-containing compound. Another method relates to depositing a TaSifilm, soaking with an aluminum-containing compound, and repeating for a thicker film. A third method relates to depositing an aluminum-doped TaSifilm using tantalum, aluminum and silicon precursors.

Uv Curing Of Pecvd-Deposited Sacrificial Polymer Films For Air-Gap Ild

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US Patent:
20080182403, Jul 31, 2008
Filed:
Jan 22, 2008
Appl. No.:
12/017879
Inventors:
ATIF NOORI - Saratoga CA, US
Francimar Schmitt - Santa Clara CA, US
Annamalai Lakshmanan - Fremont CA, US
Bok Hoen Kim - San Jose CA, US
Reza Arghavani - Scotts Valley CA, US
International Classification:
H01L 21/768
US Classification:
438618, 257E21575
Abstract:
Embodiments of the invention generally provide a method of forming an air gap between conductive elements of a semiconductor device, wherein the air gap has a dielectric constant of approximately 1. The air gap may generally be formed by depositing a sacrificial material between the respective conductive elements, depositing a porous layer over the conductive elements and the sacrificial material, and then stripping the sacrificial material out of the space between the respective conductive elements through the porous layer, which leaves an air gap between the respective conductive elements. The sacrificial material may be, for example, a polymerized alpha terpinene layer, the porous layer may be, for example, a porous carbon doped oxide layer, and the stripping process may utilize a UV based curing process, for example.

Non-Volatile Memory Having Charge Trap Layer With Compositional Gradient

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US Patent:
20100096688, Apr 22, 2010
Filed:
Oct 22, 2008
Appl. No.:
12/256119
Inventors:
Mihaela Balseanu - Sunnyvale CA, US
Vladimir Zubkov - Mountain View CA, US
Li-Qun Xia - Cupertino CA, US
Atif Noori - Saratoga CA, US
Reza Arghavani - Scotts Valley CA, US
Derek R. Witty - Fremont CA, US
Amir Al-Bayati - San Jose CA, US
International Classification:
H01L 29/792
H01L 21/336
H01L 29/68
US Classification:
257324, 438585, 438787, 438791, 257E21423, 257E2917, 257E29309
Abstract:
A flash memory device and method of forming a flash memory device are provided. The flash memory device includes a silicon nitride layer having a compositional gradient in which the ratio of silicon to nitrogen varies through the thickness of the layer. The silicon nitride layer having a compositional gradient of silicon and nitrogen provides an increase in charge holding capacity and charge retention time of the unit cell of a non-volatile memory device.

Dry Chemical Cleaning For Semiconductor Processing

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US Patent:
20120220116, Aug 30, 2012
Filed:
Jul 27, 2011
Appl. No.:
13/192034
Inventors:
Atif Noori - Saratoga CA, US
Maitreyee Mahajani - Saratoga CA, US
Patricia M. Liu - Saratoga CA, US
Steven Hung - Sunnyvale CA, US
Tatsuya E. Sato - San Jose CA, US
Mei Chang - Saratoga CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 21/28
US Classification:
438591, 257E2119
Abstract:
A deposition process including a dry etch process, followed by a deposition process of a high-k dielectric is disclosed. The dry etch process involves placing a substrate to be cleaned into a processing chamber to remove surface oxides. A gas mixture is energized to form a plasma of reactive gas which reacts with an oxide on the substrate, forming a thin film. The substrate is heated to vaporize the thin film and expose a substrate surface. The substrate surface is substantially free of oxides. Deposition is then used to form a layer on the substrate surface.

Methods For Manufacturing High Dielectric Constant Films

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US Patent:
20120270409, Oct 25, 2012
Filed:
Apr 2, 2012
Appl. No.:
13/437305
Inventors:
Hyungjun Kim - Seoul, KR
Woo-Hee Kim - Seoul, KR
Min-Kyu Kim - Incheon, KR
Steven Hung - Sunnyvale CA, US
Atif Noori - Saratoga CA, US
David Thompson - San Jose CA, US
Jeffrey W. Anthis - San Jose CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 21/314
US Classification:
438763, 438785, 257E21266
Abstract:
Provided are methods for depositing a cerium doped hafnium containing high-k dielectric film on a substrate. The reagents of specific methods include hafnium tetrachloride, an organometallic complex of cerium and water.

N-Metal Film Deposition With Initiation Layer

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US Patent:
20120322250, Dec 20, 2012
Filed:
Jun 18, 2012
Appl. No.:
13/525604
Inventors:
Seshadri Ganguli - Sunnyvale CA, US
Xinliang Lu - Fremont CA, US
Atif Noori - Saratoga CA, US
Maitreyee Mahajani - Saratoga CA, US
Shih Chung Chen - Cupertino CA, US
Mei Chang - Saratoga CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 21/283
US Classification:
438585, 257E2119
Abstract:
Provided are methods of depositing N-Metals onto a substrate. Some methods comprise providing an initiation layer of TaM or TiM layer on a substrate, wherein M is selected from aluminum, carbon, noble metals, gallium, silicon, germanium and combinations thereof; and exposing the substrate having the TaM or TiM layer to a treatment process comprising soaking the surface of the substrate with a reducing agent to provided a treated initiation layer.
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Atif M Noori from San Carlos, CA, age ~46 Get Report