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Arthur C Gossard

from Santa Barbara, CA
Age ~89
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Also known as:
Arthur Charles Gossard, Sarthur C Gossard
Phone and address:
4250 Via Esperanza, Santa Barbara, CA 93110
(805) 967-7790
Related to:
Grace F Gossard, 24Natasha Alayne Gossard, 47Christopher GossardSuzanne Gossard Yates, 56Marsha P Gossard, 81Jeffery D Yates, 66Jeffrey D Yates, 63Emma YatesChris Gossard, 58
Connected to:
Aaron R Gossard, 29Bill C Gossard, 72Julia D Gossard, 86Tami J Gossard, 46Allison Gosse, 57Andrea C Gosse, 42Brittany L Gosse, 33Cara M Gosse, 47Cindy M Gosse, 84Elizabeth Gosse, 77

Arthur Gossard Phones & Addresses

  • 4250 Via Esperanza, Santa Barbara, CA 93110 (805) 967-7790
  • Warren, NJ
  • 5162 Shenandoah St, Ventura, CA 93003
  • Plainfield, NJ
  • 4250 Via Esperanza, Santa Barbara, CA 93110

Work

Position: Retired

Education

Degree: Graduate or professional degree

Business Records

Name / Title
Company / Classification
Phones & Addresses
Arthur L. Gossard
GOSSARD FARMS, LTD

Publications

Amazon

Spring Manual Of Practice In Economic Zoology: What To Do In Spring Against The More Imortant Insect Pests Of The Farm, Orchard And Garden

Spring Manual Of Practice In Economic Zoology: What To Do In Spring Against The More Imortant Insect Pests Of The Farm, Orchard And Garden

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This is a reproduction of a book published before 1923. This book may have occasional imperfections such as missing or blurred pages, poor pictures, errant marks, etc. that were either part of the original artifact, or were introduced by the scanning process. We believe this work is culturally imp...
Author

Harry Arthur Gossard

Binding

Paperback

Pages

92

Publisher

Nabu Press

ISBN #

1248478320

EAN Code

9781248478325

ISBN #

10

Orchard Bark Beetles And Pin Hole Borers

Orchard bark beetles and pin hole borers

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This historic book may have numerous typos and missing text. Purchasers can download a free scanned copy of the original book (without typos) from the publisher. Not indexed. Not illustrated. 1913 Excerpt: ...being indulged in during the morning hours and practically none at night. During the daylig...
Author

Harry Arthur Gossard

Binding

Paperback

Pages

26

Publisher

RareBooksClub.com

ISBN #

1236045556

EAN Code

9781236045553

ISBN #

9

Fall Manual Of Practice In Economic Zoology Volume Â- 233

Fall manual of practice in economic zoology Volume â- 233

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This historic book may have numerous typos and missing text. Purchasers can download a free scanned copy of the original book (without typos) from the publisher. Not indexed. Not illustrated. 1911 Excerpt: ... material may be used for these, putting the bands in place about'October 1st: FALL CANKER ...
Author

Harry Arthur Gossard

Binding

Paperback

Pages

44

Publisher

RareBooksClub.com

ISBN #

1231007745

EAN Code

9781231007747

ISBN #

8

The Peach Tree Borer

The Peach Tree Borer

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This is a reproduction of a book published before 1923. This book may have occasional imperfections such as missing or blurred pages, poor pictures, errant marks, etc. that were either part of the original artifact, or were introduced by the scanning process. We believe this work is culturally imp...
Author

Harry Arthur Gossard

Binding

Paperback

Pages

36

Publisher

Nabu Press

ISBN #

1175023701

EAN Code

9781175023704

ISBN #

7

Epitaxial Microstructures, Volume 40 (Semiconductors And Semimetals)

Epitaxial Microstructures, Volume 40 (Semiconductors and Semimetals)

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Newly developed semiconductor microstructures can now guide light and electrons resulting in important consequences for state-of-the-art electronic and photonic devices. This volume introduces a new generation of epitaxial microstructures. Special emphasis has been given to atomic control during gro...
Binding

Hardcover

Pages

426

Publisher

Academic Press

ISBN #

0127521402

EAN Code

9780127521404

ISBN #

1

Some Ohio Birds

Some Ohio Birds

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This historic book may have numerous typos and missing text. Purchasers can download a free scanned copy of the original book (without typos) from the publisher. Not indexed. Not illustrated. 1912 Excerpt: ... Only nine percent of their food for winter is animal, the remainder being largely the seed...
Author

Harry Arthur Gossard

Binding

Paperback

Pages

30

Publisher

RareBooksClub.com

ISBN #

1130770109

EAN Code

9781130770100

ISBN #

6

Advanced Epitaxy For Future Electronics, Optics, And Quantum Physics: Seventh Lecture International Science Lecture Series (International Science Lecture Series Vol. 7)

Advanced Epitaxy for Future Electronics, Optics, and Quantum Physics: Seventh Lecture International Science Lecture Series (International Science Lecture Series Vol. 7)

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The future development of electronics, optics, and, quite probably, quantum physics is being driven by advances in epitaxial materials. Band gap engineering, wafer bonding techniques, and epitaxial regrowth technology will push transistors far beyond the present speed barriers. Oxide growth within e...
Author

Arthur C. Gossard, Mathematics, and Applications Commission on Physical Sciences, Division on Engineering and Physical Sciences, University of California at Santa Barbara, Organized by the National Research Council and the Office of Naval Research

Binding

Paperback

Pages

20

Publisher

National Academies Press

ISBN #

0309072654

EAN Code

9780309072656

ISBN #

3

Epitaxial Microstructures Semiconductors And Semimetals Volume 40

Epitaxial Microstructures Semiconductors and Semimetals Volume 40

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Newly developed semiconductor microstructures can now guide light and electrons resulting in important consequences for state-of-the-art electronic and photonic devices. This volume introduces a new generation of epitaxial microstructures. Special emphasis has been given to atomic control during gro...
Binding

Paperback

Pages

456

Publisher

Academic Press

ISBN #

0124014224

EAN Code

9780124014220

ISBN #

2

Us Patents

Enhanced Tunnel Junction For Improved Performance In Cascaded Solar Cells

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US Patent:
20070227588, Oct 4, 2007
Filed:
Feb 15, 2007
Appl. No.:
11/675269
Inventors:
Arthur Gossard - Santa Barbara CA, US
Joshua Zide - Goleta CA, US
Jeramy Zimmerman - Santa Barbara CA, US
Assignee:
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA - Oakland CA
International Classification:
H01L 31/00
US Classification:
136255000
Abstract:
A method and device that incorporates metallic nanoparticles at the p-n tunnel junction in a cascaded photovoltaic solar cell. The use of the nanoparticles enhances the tunneling current density through the tunnel junction. As such, the efficiency of the solar cell is increased. A method in accordance with the present invention comprises making a first solar cell having a first bandgap, making a tunnel junction coupled to the first solar cell, and making a second solar cell having a second bandgap, coupled to the tunnel junction opposite the first solar cell, wherein the tunnel junction comprises nanoparticles. Such a method further optionally includes the nanoparticles being a metal or a semi metal, specifically a semi-metal of erbium arsenide, the nanoparticles being deposited in an island structure within the tunnel junction, and the first solar cell being deposited on a flexible substrate. A device in accordance with the present invention comprises a tunnel junction, wherein the tunnel junction comprises nanoparticles between the n+ layer and the p+ layer of the tunnel junction. Such a device further optionally includes the device being a cascaded solar cell, the nanoparticles are a metal or semi-metal, specifically a semi-metal of erbium arsenide, and the device is fabricated on a flexible substrate.

High Efficiency Thermoelectric Materials Based On Metal/Semiconductor Nanocomposites

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US Patent:
20080001127, Jan 3, 2008
Filed:
Jun 14, 2007
Appl. No.:
11/763326
Inventors:
Joshua Zide - Goleta CA, US
Arthur Gossard - Santa Barbara CA, US
Ali Shakouri - Santa Cruz CA, US
John Bowers - Santa Barbara CA, US
Assignee:
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA - Oakland CA
International Classification:
H01B 1/02
US Classification:
252521100
Abstract:
Composite epitaxial materials that comprise semimetallic ErAs nanoparticles or nanoislands epitaxially embedded in a semiconducting InGaAs matrix both as superlattices and randomly distributed throughout the matrix are disclosed. The presence of these particles increases the free electron concentration in the material while providing scattering centers for phonons. Electron concentration, mobility, and Seebeck coefficient of these materials are discussed and their potential for use in thermoelectric power generators is postulated. These composite materials in accordance with the present invention have high electrical conductivity, low thermal conductivity, and a high Seebeck coefficient. The ErAs nanoislands provides additional scattering mechanism for the mid to long wavelength phonon—the combination reduces the thermal conductivity below the alloy limit.

Method Of Controlling Multi-Species Epitaxial Deposition

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US Patent:
59367164, Aug 10, 1999
Filed:
Feb 27, 1997
Appl. No.:
8/807663
Inventors:
Paul Ruengrit Pinsukanjana - St. Paul MN
Arthur Charles Gossard - Santa Barbara CA
Andrew William Jackson - Santa Barbara CA
Jan Arild Tofte - Goleta CA
John H. English - Santa Ynez CA
International Classification:
G01N 2131
US Classification:
356 72
Abstract:
An integrated dual beam multi-channel optical-based flux monitor and method of monitoring atomic absorption of a plurality of atomic species during epitaxial deposition. Light from multiple sources is simultaneously passed through a region of deposition of material such that atomic absorption takes place. The light that passed through the region is then compared to light in a reference arm that did not pass through a region of atomic absorption. From this comparison the deposition of an epitaxial layer can be carefully monitored and controlled.

Method Of Fabricating Periodic Monolayer Semiconductor Structures By Molecular Beam Epitaxy

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US Patent:
42617715, Apr 14, 1981
Filed:
Oct 31, 1979
Appl. No.:
6/090020
Inventors:
Raymond Dingle - Summit NJ
Arthur C. Gossard - Warren NJ
Pierre M. Petroff - Westfield NJ
William Wiegmann - Middlesex NJ
Assignee:
Bell Telephone Laboratories, Incorporated - Murray Hill NJ
International Classification:
H01L 21203
H01L 2938
US Classification:
148175
Abstract:
Suitably modified molecular beam epitaxy (MBF) techniques are used to synthesize single crystal, periodic monolayer superlattices of semiconductor alloys on single crystal substrates maintained below a critical growth temperature. Described is the fabrication of periodic structures of (GaAs). sub. n (AlAs). sub. m, where m and n are the number of contiguous monolayers of GaAs and AlAs, respectively, in each period of the structure. As many as 10,000 monolayers were grown in a single structure. Also described is the MBE growth of (Al. sub. x Ga. sub. 1-x As). sub. n (Ge. sub. 2). sub. m, quasi-superlattice and non-superlattice structures depending on the particular values of n, m and the growth temperature. Waveguides, heterostructure lasers and X-ray reflectors using some of the structures are also described.

Semiconductor Devices And Methods Of Making Such Devices

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US Patent:
48600687, Aug 22, 1989
Filed:
Jan 27, 1988
Appl. No.:
7/149994
Inventors:
Arthur C. Gossard - Warren NJ
Robert C. Miller - Summit NJ
Pierre M. Petroff - Westfield NJ
Assignee:
American Telephone and Telegraph Company, AT&T Bell Laboratories - Murray Hill NJ
International Classification:
H01L 29161
H01L 29205
H01L 29225
US Classification:
357 16
Abstract:
Single GaAs quantum well or single GaAs active layer or single reverse interface structures with Al. sub. x Ga. sub. 1-x As barrier layers have improved qualities when one or more narrow bandgap GaAs getter-smoothing layers, which are thin, are grown and are incorporated in the barrier layer before and in close proximity to the active layer.

Methods Of Making Nanometer Period Optical Gratings

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US Patent:
51661004, Nov 24, 1992
Filed:
Dec 6, 1990
Appl. No.:
7/622909
Inventors:
Arthur C. Gossard - Santa Barbara CA
Paul K. Hansma - Goleta CA
Scott A. Chalmers - Goleta CA
Albrecht L. Weisenhorn - Goleta CA
International Classification:
H01L 21465
US Classification:
437228
Abstract:
An ultragrating is a nanometer-period optical grating that is fabricated from a horizontal superlattice. A superlattice is a material structure grown on a substrate by molecular-beam epitaxy or metal-organic chemical vapor deposition and having periodic compositional variations. A horizontal superlattice is one in which the compositional variations are in a direction parallel to the substrate surface. By the selective removal of one of the superlattice materials, an ultragrating is obtained. The smallest grating periods possible before this discovery were those made by electron-beam lithographic techniques which are limited to values greater than 100 nanometers. Thus, the ultragrating with grating periods ranging from one to a hundred nanometers represents an order of magnitude advancement in the state of the art of making optical gratings. The ultragrating will fine utility in the design of advanced electronic devices and for general scientific and engineering purposes.

Method Of Making An Improved Group Iii-V Semiconductor Device Utilizing A Getter-Smoothing Layer

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US Patent:
45781273, Mar 25, 1986
Filed:
Aug 13, 1982
Appl. No.:
6/408009
Inventors:
Arthur C. Gossard - Warren NJ
Robert C. Miller - Summit NJ
Pierre M. Petroff - Westfield NJ
Assignee:
AT&T Bell Laboratories - Murray Hill NJ
International Classification:
H01L 21203
H01L 21363
US Classification:
148175
Abstract:
Single GaAs quantum well or single GaAs active layer or single reverse interface structures with Al. sub. x Ga. sub. 1-x As barrier layers have improved qualities when one or more narrow bandgap GaAs getter-smoothing layers, which are thin, are grown and are incorporated in the barrier layer before and in close proximity to the active layer.

High Speed Light Modulator Using Multiple Quantum Well Structures

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US Patent:
45256870, Jun 25, 1985
Filed:
Dec 2, 1983
Appl. No.:
6/558545
Inventors:
Daniel S. Chemla - Rumson NJ
Theodoor C. Damen - Colts Neck NJ
Arthur C. Gossard - Warren NJ
David A. B. Miller - Lincroft NJ
Thomas H. Wood - Highlands NJ
Assignee:
AT&T Bell Laboratories - Murray Hill NJ
International Classification:
H01L 3302
G02B 514
US Classification:
332 751
Abstract:
A semiconductor apparatus is provided. The apparatus has a multiple layer heterostructure having first and second material layers having first and second bandgaps, respectively and a semiconductor layer of a third bandgap being fabricated between said material layers, the bottom of the conduction band of said semiconductor layer is below the bottom of the conduction band of said material layers, and the top of the valence band of said semiconductor layer is above the top of the valence band of said material layers, the thickness of said semiconductor layer is chosen sufficient for carrier confinement effects within said semiconductor layer to influence the optical properties of said multiple layer heterostructure, and means for applying an electric field to the multiple layer heterostructure in order to vary an optical absorption coefficient and an index of refraction of the multiple layer heterostructure in response to the electric field. The apparatus is adapted for use as an optical absorption modulator or optical phase modulator, or as an electrically tuned Fabry-Perot cavity or as a polarization modulator, or as a nonlinear or bistable apparatus in which the operating point is varied by application of an electric field.

Wikipedia References

Arthur Gossard Photo 1

Arthur Gossard

Work:
Position:

Member of the United States National Academy of Engineering

Company:

University of California, Santa Barbara

Education:
Studied at:

University of California, Berkeley

Academic degree:

Member of the United States National Academy of Sciences • Professor

Professions and applied sciences:

Electrical engineering

Wikipedia

Arthur Gossard

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Arthur C. Gossard is a professor of Materials and Electrical Engineering at the University of California, Santa Barbara. In 1982 he co-discovered the fractional ...

Isbn (Books And Publications)

Epitaxial Microstructures

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Author

Arthur C. Gossard

ISBN #

0127521402

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Arthur C Gossard from Santa Barbara, CA, age ~89 Get Report