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Arnold S Shih

from Potomac, MD
Age ~81
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Also known as:
Arnold Way Shih, Arnold Mary Shih, Arnold T Shih, Arnold D Shih, Arnold Te Shih, Arnold S Tshi, Shih T Arnold, Michelle Ming Yi Shih, Mary Shih, Arnold H
Phone and address:
9121 Bells Mill Rd, Rockville, MD 20854
(301) 469-6327
Related to:
Inga Hansen, 34Mark Hansen, 66
Connected to:
Brenda Shih, 31Carrie Shih, 27Celia M Shih, 77Chia Shih, 81Clara C Shih, 42Elaine M Shih, 49Eleanor T Shih, 62Ethan K Shih, 39Gerry C Shih, 37Grace C Shih, 38

Arnold Shih Phones & Addresses

  • 9121 Bells Mill Rd, Potomac, MD 20854 (301) 469-6327
  • Rockville, MD
  • Gaithersburg, MD
  • Riverside, CT
  • New York, NY

Education

Degree: Graduate or professional degree

Publications

Us Patents

Electro-Chemical Sensors For Gas Detection In Electron Tubes

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US Patent:
41475151, Apr 3, 1979
Filed:
Dec 22, 1977
Appl. No.:
5/863363
Inventors:
George A. Haas - Alexandria VA
Richard F. Greene - Bethesda MD
Arnold Shih - Gaithersburg MD
Assignee:
The United States of America as represented by the Secretary of the Navy - Washington DC
International Classification:
G01N 2704
US Classification:
23232E
Abstract:
An electro-chemical gas sensor for use in electron tubes comprising a crylline body of BaO formed on a non-interacting (chemically and electrically) substrate and at least two electrodes. The change in conductivity of the barium oxide upon exposure to tube gases may be used to determine the type and quantity of gases contaminating the electron emitter and estimate changes in the emitter's work function or electron emission capability due to gas contamination.

Method For Predicting The Performance Of Cathode Materials

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US Patent:
44928661, Jan 8, 1985
Filed:
May 2, 1983
Appl. No.:
6/490994
Inventors:
George A. Haas - Alexandria VA
Arnold Shih - Potomac MD
Christie R. K. Marrian - Alexandria VA
Assignee:
The United States of America as represented by the Secretary of the Navy - Washington DC
International Classification:
H01J 4000
H01J 4700
US Classification:
250305
Abstract:
A method for predicting the proclivity of various materials to emit electrons, and thus their suitability for cathode fabrication. The method includes steps to determine the surface work function lowering by analyzing and comparing the Auger electron-energy spectra of a plurality of sample materials.

Investigation Of Near-Surface Electronic Properties In Semiconductors By Electron Beam Scanning

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US Patent:
41444884, Mar 13, 1979
Filed:
Dec 22, 1977
Appl. No.:
5/863364
Inventors:
George A. Haas - Alexandria VA
Arnold Shih - Gaithersburg MD
Richard E. Thomas - Riverdale MD
Assignee:
The United States of America as represented by the Secretary of the Navy - Washington DC
International Classification:
G01R 2702
US Classification:
324 62
Abstract:
An electron-beam scanning system for investigating the nonuniformity of (1) he work function, (2) the position of the conduction-band edge with respect to the Fermi level, and (3) the electron affinity at the surface of a single-crystal semiconductor. A small-diameter, low-energy electron beam is scanned over the surface to be investigated. The current collected by the surface for electron energies in the retarding-field region is related to the work function of the surface, whereas the current collected by the surface for electron energies in the accelerating-field region is related to the position of the conduction-band edge. The electron affinity is related to the combination of these relationships. Variations in the current collected by the surface for appropriately selected electron energies are used to provide a visual display of variations in these quantities.

Method For Determining Conduction-Band Edge And Electron Affinity In Semiconductors

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US Patent:
41421450, Feb 27, 1979
Filed:
Dec 22, 1977
Appl. No.:
5/863362
Inventors:
George A. Haas - Alexandria VA
Arnold Shih - Gaithersburg MD
Richard E. Thomas - Riverdale MD
Assignee:
The United States of America as represented by the Secretary of the Navy - Washington DC
International Classification:
G01R 2702
US Classification:
324 62
Abstract:
A method which utilizes low-energy electron reflections to determine the ctron affinity and to simultaneously locate the position of the conduction-band edge with respect to the Fermi level at the surface of a single-crystal semiconductor. A beam of very-low-energy electrons (
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Arnold S Shih from Potomac, MD, age ~81 Get Report