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Armand Aziz Galan

from Lake Peekskill, NY
Age ~37
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Also known as:
Armand A Galan, Armand Gallan
Related to:
Nancy E Torreros, 48Sandra Veronica Rivera, 48Elisa P Galan, 89John N Galan, 90Jesse Galan, 66Andre Galan, 32Kasey C Galan, 44Letitia E Rivera, 71Janie E Newcomer, 72
Connected to:
Abigail M Galan, 59Adam Galan, 57Alejandro A Galan, 81Becky J Galan, 63Christina J Galan, 47Desiree M Galan, 41Dora A Galan, 71Eddy F Galan, 36Elias Galan, 53Emilia Galan, 74

Armand Galan Phones & Addresses

  • Lake Peekskill, NY
  • Millwood, NY
  • New York, NY
  • 3515 Bob Billa St, San Antonio, TX 78223 (210) 447-7013
  • Ithaca, NY
  • Ossining, NY
  • 3515 Bob Billa St, San Antonio, TX 78223

Work

Position: Craftsman/Blue Collar

Education

Degree: High school graduate or higher

Emails

a***[email protected]

Publications

Us Patents

Spin Torque Mram Fabrication Using Negative Tone Lithography And Ion Beam Etching

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US Patent:
20170062707, Mar 2, 2017
Filed:
Jun 16, 2016
Appl. No.:
15/184109
Inventors:
- Armonk NY, US
Armand A. Galan - New York NY, US
Steve Holmes - Ossining NY, US
Eric A. Joseph - White Plains NY, US
Gen P. Lauer - Yorktown Heights NY, US
Qinghuang Lin - Yorktown Heights NY, US
Nathan P. Marchack - White Plains NY, US
International Classification:
H01L 43/10
H01L 43/12
H01L 27/22
H01L 43/02
Abstract:
A magnetoresistive memory cell includes a magnetic tunnel junction pillar having a circular cross section. The pillar has a pinned magnetic layer, a tunnel barrier layer, and a free magnetic layer. A first conductive contact is disposed above the magnetic tunnel junction pillar. A second conductive contact is disposed below the magnetic tunnel junction pillar.

Spin Torque Mram Fabrication Using Negative Tone Lithography And Ion Beam Etching

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US Patent:
20170062708, Mar 2, 2017
Filed:
Aug 31, 2015
Appl. No.:
14/840176
Inventors:
- Armonk NY, US
Armand A. Galan - New York NY, US
Steve Holmes - Ossining NY, US
Eric A. Joseph - White Plains NY, US
Gen P. Lauer - Yorktown Heights NY, US
Qinghuang Lin - Yorktown Heights NY, US
Nathan P. Marchack - White Plains NY, US
International Classification:
H01L 43/12
Abstract:
A method for forming a memory device includes masking a photoresist material using a reticle and a developer having a polarity opposite that of the photoresist to provide an island of photoresist material. A planarizing layer is etched to establish a pillar of planarizing material defined by the island of photoresist material. A metal layer is etched to form a metal pillar having a diameter about the same as the pillar of planarizing material. A memory stack is etched to form a memory stack pillar having a diameter about the same as the metal pillar. A magnetoresistive memory cell includes a magnetic tunnel junction pillar having a circular cross section. The pillar has a pinned magnetic layer, a tunnel barrier layer, and a free magnetic layer. A first conductive contact is disposed above the magnetic tunnel junction pillar. A second conductive contact is disposed below the magnetic tunnel junction pillar.
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Armand Aziz Galan from Lake Peekskill, NY, age ~37 Get Report