Anup Anup Pancholi

20230008806, Jan 12, 2023

Sep 14, 2022

17/944732

- Suwon-si, KR
Anup PANCHOLI - Hillsboro OR, US

SAMSUNG ELECTRONICS CO., LTD. - Suwon-si

H01L 33/50
H01L 27/32
H01L 27/15

Embodiments disclosed herein include micro light emitting device (LED) display panels and methods of forming such devices. In an embodiment, a display panel includes a display backplane substrate, a light emitting element on the display backplane, a transparent conductor over the light emitting element, a dielectric layer over the transparent conductor, and a color conversion device over the light emitting element. In an embodiment, the dielectric layer separates the transparent conductor from the color conversion device.

20210375620, Dec 2, 2021

Jun 2, 2020

16/890937

- Santa Clara CA, US
Anup Pancholi - Hillsboro OR, US
John Heck - Berkeley CA, US
Thomas Sounart - Chandler AZ, US
Harel Frish - Albuquerque NM, US
Sansaptak Dasgupta - Portland OR, US

Intel Corporation - Santa Clara CA

H01L 21/02
H01L 21/8222
H01L 21/8234

A device includes a layer including a first III-Nitride (III-N) material, a channel layer including a second III-N material, a release layer including nitrogen and a transition metal, where the release layer is between the first III-N material and the second III-N material. The device further includes a polarization layer including a third III-N material above the release layer, a gate structure above the polarization layer, a source structure and a drain structure on opposite sides of the gate structure where the source structure and the drain structure each include a fourth III-N material. The device further includes a source contact on the source structure and a drain contact on the drain structure.

20210135048, May 6, 2021

Jan 11, 2021

17/146453

- Santa Clara CA, US
Anup PANCHOLI - Hillsboro OR, US
Ali KHAKIFIROOZ - Los Altos CA, US

H01L 33/02
H01L 33/38
H01L 33/06
H01L 33/04
H01L 33/24
H01L 27/15
H01L 33/18
H01L 33/32

Micro light-emitting diode (LED) displays and assembly apparatuses are described. In an example, a pixel element for a micro-light emitting diode (LED) display panel includes a first color nanowire LED, a second color nanowire LED, the second color different than the first color, and a pair of third color nanowire LEDs, the third color different than the first and second colors. A continuous insulating material layer ius laterally surrounding the first color nanowire LED, the second color nanowire LED, and the pair of third color nanowire LEDs.

20210020537, Jan 21, 2021

Jul 19, 2019

16/516692

- Santa Clara CA, US
Manish Dubey - Chandler AZ, US
Peng Li - Chandler AZ, US
Aravindha R. Antoniswamy - Phoenix AZ, US
Anup Pancholi - Hillsboro OR, US

Intel Corporation - Santa Clara CA

H01L 23/367
H01L 23/00

Embodiments may relate to a microelectronic package that includes a die coupled with a package substrate. A solder thermal interface material (STIM) may be coupled with the die such that the die is between the STIM and the package substrate. An integrated heat spreader (IHS) may be coupled with the STIM such that the STIM is between the IHS and the die, and the IHS may include a feature that is to control bleed-out of the STIM during STIM reflow based on surface tension of the STIM. Other embodiments may be described or claimed.

20200395403, Dec 17, 2020

Jun 13, 2019

16/440755

- Santa Clara CA, US
Anup PANCHOLI - Hillsboro OR, US
Ali KHAKIFIROOZ - Los Altos CA, US

H01L 27/15
H01L 33/32
H01L 33/22
H01L 33/50
G09F 9/33

Micro light-emitting diode displays and methods of fabricating micro LED displays are described. In an example, a micro light emitting diode pixel structure includes a plurality of micro light emitting diode devices in a dielectric layer. A transparent conducting oxide layer is above the dielectric layer. A color conversion device (CCD) is above the transparent conducting oxide layer and over one of the plurality of micro light emitting diode devices.

20200303611, Sep 24, 2020

Jun 8, 2020

16/946166

- Santa Clara CA, US
Khaled Ahmed - San Jose CA, US
Anup Pancholi - Hillsboro OR, US
Shawna M. Liff - Scottsdale AZ, US

Intel Corporation - Santa Clara CA

H01L 33/62
H01L 33/00
H01L 25/075

A micro-light emitting diode (LED) display and a method of fabricating the same. The method includes aligning a display backplane and a source semiconductor wafer with one another. A plurality of backplane contact pads of a first width are fixed to the backplane and include first solder pads thereon with a second width smaller than the first width. The wafer includes thereon a plurality of micro-LEDs, and a plurality of micro-LED contact pads fixed to the micro-LEDs and having a third width smaller than the first width. The method includes: aligning such that at least some of the micro-LED contact pads register with corresponding first solder pads; releasing at least some of the micro-LEDs from the wafer onto corresponding first solder pads; and forming a plurality of second solder pads by melting the corresponding first solder pads. The second solder pads bond the at least some of the micro-LEDs to corresponding ones of the plurality of backplane contact pads, the second solder pads further extending on said corresponding ones of the plurality of backplane contact pads beyond a footprint thereon of said some of the micro-LEDs.

20200203432, Jun 25, 2020

Dec 19, 2018

16/226209

Willy RACHMADY - Beaverton OR, US
Prashant MAJHI - San Jose CA, US
Ravi PILLARISETTY - Portland OR, US
Elijah KARPOV - Portland OR, US
Brian DOYLE - Portland OR, US
Anup PANCHOLI - Hillsboro OR, US
Abhishek SHARMA - Hillsboro OR, US

H01L 27/28
H01L 29/786
H01L 29/66
H01L 51/05
H01L 51/10

Embodiments herein describe techniques for a semiconductor device including a semiconductor substrate, a first device of a first wafer, and a second device at back end of a second wafer, where the first device is bonded with the second device. A first metal electrode of the first device within a first dielectric layer is coupled to an n-type oxide TFT having a channel layer that includes an oxide semiconductor material. A second metal electrode of the second device within a second dielectric layer is coupled to p-type organic TFT having a channel layer that includes an organic material. The first dielectric layer is bonded to the second dielectric layer, and the first metal electrode is bonded to the second metal electrode. The n-type oxide TFT and the p-type organic TFT form a symmetrical pair of transistors of a CMOS circuit. Other embodiments may be described and/or claimed.

20200119235, Apr 16, 2020

Oct 11, 2018

16/157179

- Santa Clara CA, US
Anup PANCHOLI - Hillsboro OR, US

H01L 33/50
H01L 27/15
H01L 27/32

Embodiments disclosed herein include micro light emitting device (LED) display panels and methods of forming such devices. In an embodiment, a display panel includes a display backplane substrate, a light emitting element on the display backplane, a transparent conductor over the light emitting element, a dielectric layer over the transparent conductor, and a color conversion device over the light emitting element. In an embodiment, the dielectric layer separates the transparent conductor from the color conversion device.