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Antonella J Cucchetti

from Manchester, MA
Age ~59
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Also known as:
Antonella Kaper, Antonell I
Phone and address:
3 Running Ridge Rd, Manchester, MA 01944
(978) 526-1807
Related to:
Jonathan Schaefer, 73Brian L Frank, 58
Connected to:
Brad A Cucchetti, 51Angela M Cucchiara, 87Cynthia L Cucchi, 53Daniel Cucchiara, 68Francesca M Cucchiara, 32Gregory Cucchiara, 69James J Cucchi, 69Jayde Cucchiara, 98John J Cucchi, 43Josephine B Cucchiaro, 71

Antonella Cucchetti Phones & Addresses

  • 3 Running Ridge Rd, Manchester, MA 01944 (978) 526-1807
  • Boston, MA
  • Beverly, MA
  • Providence, RI
  • Phoenix, AZ
  • Los Alamos, NM

Resumes

Resumes

Antonella Cucchetti Photo 1

Director

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Location:
Boston, MA
Industry:
Semiconductors
Work:
Applied Materials
Director
Varian Semiconductor Jan 1, 1996 - Jan 1, 2010
Principal Scientist
Applied Materials Jan 1, 1996 - Jan 1, 2010
Senior Engineering Manager
Education:
Brown University 1992 - 1997
Doctorates, Doctor of Philosophy, Physics Università Degli Studi Di Milano 1984 - 1990
Liceo Classico Cesare Beccaria
Mit Sloan School of Management
Liceo Classico C. Beccaria
Skills:
Semiconductor Industry
Engineering Management
Semiconductors
Design of Experiments
Failure Analysis
Metrology
Antonella Cucchetti Photo 2

Antonella Cucchetti

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Location:
Boston, MA
Industry:
Electrical/Electronic Manufacturing

Publications

Us Patents

Ion Beam Contamination Determination

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US Patent:
7402820, Jul 22, 2008
Filed:
Nov 30, 2005
Appl. No.:
11/289885
Inventors:
Russell Low - Rowley MA, US
Joseph C. Olson - Beverly MA, US
Antonella Cucchetti - Beverly MA, US
Anthony Renau - W. Newbury MA, US
Marie Welsch - Georgetown MA, US
Assignee:
Varian Semiconductor Equipment Associates, Inc. - Gloucester MA
International Classification:
H01L 21/425
H01J 37/317
US Classification:
25049221
Abstract:
A system, method and program product for determining contamination of an ion beam are disclosed. In the event of an isobaric interference, or near isobaric interference between a contaminant ion and an expected ion of an ion beam, which is difficult to detect, it is possible to measure a third ion in the ion beam and estimate, based on the amount of the third ion measured, a relative amount of the contaminant ion compared to the expected ion. The estimated relative amount of the contaminant ion is used together with a measured mass resolution of the ion implantation system to determine whether an ion implantation process needs to be suspended.

Ion Beam Implant Current, Spot Width And Position Tuning

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US Patent:
7442944, Oct 28, 2008
Filed:
Oct 7, 2004
Appl. No.:
10/960904
Inventors:
Shengwu Chang - South Hamilton MA, US
Antonella Cucchetti - Beverly MA, US
Joseph P. Dzengeleski - Newton NH, US
Gregory R. Gibilaro - Topsfield MA, US
Rosario Mollica - Wilmington MA, US
Gregg A. Norris - Rockport MA, US
Joseph C. Olson - Beverly MA, US
Marie J. Welsch - Georgetown MA, US
Assignee:
Varian Semiconductor Equipment Associates, Inc. - Gloucester MA
International Classification:
H01J 37/317
US Classification:
25049221, 2504922, 250397, 250396 R
Abstract:
An ion beam tuning method, system and program product for tuning an ion implanter system are disclosed. The invention obtains an ion beam profile of the ion beam by, for example, scanning the ion beam across a profiler that is within an implant chamber; and tunes the ion implanter system to maximize an estimated implant current based on the ion beam profile to simultaneously optimize total ion beam current and ion beam spot width, and maximize implant current. In addition, the tuning can also position the ion beam along a desired ion beam path based on the feedback of the spot beam center, which improves ion implanter system productivity and performance by reducing ion beam setup time and provides repeatable beam angle performance for each ion beam over many setups.

Ion Implanter Optimizer Scan Waveform Retention And Recovery

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US Patent:
7547460, Jun 16, 2009
Filed:
Sep 12, 2001
Appl. No.:
09/950939
Inventors:
Antonella Cucchetti - Boston MA, US
Joseph Olson - Beverly MA, US
Gregory Gibilaro - Topsfield MA, US
Rosario Mollica - Wilmington MA, US
Assignee:
Varian Semiconductor Equipment Associates, Inc. - Gloucester MA
International Classification:
C23C 14/54
C23C 14/48
US Classification:
427 8, 427523, 250396 R, 250397, 25049221, 2504923
Abstract:
Methods and apparatus are provided for controlling dose uniformity in an ion implantation system. According to one embodiment of the invention, an initial scan waveform is adjusted to obtain a desired uniformity for use in a first implant process, and the adjusted scan waveform is stored. The stored scan waveform is recalled and used in a second implant process. According to a another embodiment of the invention, desired beam parameters are identified and, based on the desired beam parameters, a stored scan waveform is recalled for use in a uniformity adjustment process, and the uniformity adjustment process is performed. According to a further embodiment of the invention, an apparatus is provided that includes a beam profiler for measuring a current distribution of a scanned ion beam. The apparatus also includes a data acquisition and analysis unit for adjusting an initial scan waveform based on a desired current distribution and the measured current distribution for use in a first implant process, storing the adjusted scan waveform, recalling the stored scan waveform, and using the recalled scan waveform in a second implant process.

Implant Uniformity Control

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US Patent:
7820988, Oct 26, 2010
Filed:
Oct 2, 2008
Appl. No.:
12/244001
Inventors:
Victor M. Benveniste - Lyle WA, US
Antonella Cucchetti - Beverly MA, US
Assignee:
Varian Semiconductor Equipment Associates, Inc. - Gloucester MA
International Classification:
H01J 37/317
H01L 21/265
US Classification:
25049221, 2504922, 2504923, 250396 R, 250423 R, 250424
Abstract:
An apparatus and method for ion implantation that include destabilizing the ion beam as it passes through magnetic field, preferably a dipole magnetic field is disclosed. By introducing a bias voltage at certain points within the magnetic field, electrons from the plasma are drawn toward the magnet, thereby causing the ion beam to expand due to space charge effects. The bias voltage can be introduced into the magnet in a region where the magnetic field has only one component. Alternatively, the bias voltage can be in a region wherein the magnetic field has two components.

Tuning An Ion Implanter For Optimal Performance

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US Patent:
20080245957, Oct 9, 2008
Filed:
Apr 3, 2007
Appl. No.:
11/695747
Inventors:
Atul Gupta - Beverly MA, US
Jay Scheuer - Rowley MA, US
Daniel Distaso - Merrimac MA, US
Antonella Cucchetti - Beverly MA, US
William G. Callahan - Rockport MA, US
International Classification:
G21K 5/00
G01D 18/00
US Classification:
2502521, 2504923
Abstract:
An approach that tunes an ion implanter for optimal performance is described. In one embodiment, there is a system for tuning an ion implanter having multiple beamline elements to generate an ion beam having desired beam properties. In this embodiment, the system comprises a beamline element settings controller configured to provide beamline element settings for generating the desired beam properties. A tuning model correlates the beamline element settings with beam properties. A calibration component is configured to calibrate the tuning model in response to a determination that beam properties measured from using the tuned beamline element settings differs from the determined tuned beamline element settings.

Platen Control

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US Patent:
20120088035, Apr 12, 2012
Filed:
Oct 11, 2011
Appl. No.:
13/270644
Inventors:
Shengwu Chang - South Hamilton MA, US
Joseph C. Olson - Beverly MA, US
Frank Sinclair - Quincy MA, US
Matthew P. McClellan - Lancaster MA, US
Antonella Cucchetti - Manchester by the Sea MA, US
Assignee:
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. - Gloucester MA
International Classification:
C23C 14/48
B21C 51/00
US Classification:
427523, 72 3101
Abstract:
A system and method for maintain a desired degree of platen flatness is disclosed. A laser system is used to measure the flatness of a platen. The temperature of the platen is then varied to achieve the desired level of flatness. In some embodiments, this laser system is only used during a set up period and the resulting desired temperature is then used during normal operation. In other embodiments, a laser system is used to measure the flatness of the platen, even while the workpiece is being processed.

Technique For Ion Implanting A Target

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US Patent:
20130072008, Mar 21, 2013
Filed:
Sep 13, 2012
Appl. No.:
13/613964
Inventors:
Alexander S. Perel - Danvers MA, US
Craig R. Chaney - Lanesville MA, US
Wayne D. LeBlanc - Danvers MA, US
Robert Lindberg - Rockport MA, US
Antonella Cucchetti - Manchester by the Sea MA, US
Neil J. Bassom - Hamilton MA, US
David Sporleder - Billerica MA, US
James Young - Rockport MA, US
International Classification:
H01L 21/265
US Classification:
438514
Abstract:
A technique for ion implanting a target is disclosed. In accordance with one exemplary embodiment, the technique may be realized as a method for ion implanting a target, the method comprising: providing a predetermined amount of processing gas in an arc chamber of an ion source, the processing gas containing implant species and implant species carrier, where the implant species carrier may be one of O and H; providing a predetermined amount of dilutant into the arc chamber, wherein the dilutant may comprise a noble species containing material; and ionizing the processing gas and the dilutant.

Methods And Apparatus For Alignment Of Ion Beam Systems Using Beam Current Sensors

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US Patent:
6403972, Jun 11, 2002
Filed:
Jul 8, 1999
Appl. No.:
09/349828
Inventors:
Antonella Cucchetti - Beverly MA
Joseph C. Olson - Beverly MA
Raymond L. Pelletier - Beverly MA
Keith Pierce - Ipswich MA
Anthony Renau - West Newbury MA
Donna Smatlak - Belmont MA
Assignee:
Varian Semiconductor Equipment Associates, Inc. - Gloucester MA
International Classification:
H01J 3730
US Classification:
25049221, 250398
Abstract:
An ion beam is sensed with a beam current sensor which has a sensing aperture that is smaller than a cross-sectional dimension of the ion beam at the beam current sensor. The sensed ion beam current is indicative of ion beam position relative to a desired ion beam path. The ion beam position may be adjusted if the sensed ion beam position differs from the desired ion beam path. One or more beam current sensors may be utilized in an ion implanter for calibration and/or alignment. The beam current sensor may be utilized to determine a relation between a characteristic of an ion beam, such as magnetic rigidity, and a parameter of a system element, such as magnetic field, required to direct the ion beam along a desired ion beam path.
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Antonella J Cucchetti from Manchester, MA, age ~59 Get Report