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Anton N Sidorov

from Severna Park, MD
Age ~38
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Also known as:
Anton N Sidirov, Anton N Sidarov, Anotn Sidorov, Aton Sidorov, Sidorov Aton
Phone and address:
55 Bricepointe Ct, Severna Park, MD 21146
Related to:
Merrium J Throneburg, 98Megan Stidham, 42Carolyn Stidham, 67Mary M Stidham, 92Megan Stidham, 38Lauren L Stidham, 37Jeffrey R Stidham, 72
Connected to:
Adam S Sidorowicz, 42Aleksey Sidorov, 37Bozena Sidorowicz, 61Debra L Sidorowicz, 67Dmitri SidorovElizabeth M Sidorowicz, 104Igor Sidorov, 63Lisa A Sidorowicz, 59Natalia N Sidorova, 54Robert J Sidorowicz, 76

Anton Sidorov Phones & Addresses

  • 55 Bricepointe Ct, Severna Park, MD 21146
  • Annapolis, MD
  • Atlanta, GA
  • Hillsboro, OR
  • Louisville, KY
  • 914 Collier Rd NW APT 3317, Atlanta, GA 30318

Work

Company: Intel corp. Nov 2014 Position: Sr. research and development engineer

Education

School / High School: GEORGIA INSTITUTE OF TECHNOLOGY- Atlanta, GA 2009 Specialities: Post Doctoral in Physics/Chemistry

Skills

Material Characterization Scanning Elec... • Leo-1350 • EVO (Zesis) and experience working with ... • NanoMan VS(Veeco) • CP and M5 (Park Scientific instrument) ... • Horiba • Bruker) Micro/Nano Fabrication Processes... • E-Beam Lithography • RF/DC Sputtering • E-beam Evaporation • Wet/dry chemical etching • Wet/dry oxidation • Wafer doping Material Synthesis Chemica... • Hall effect) Software and Programming C++ • LabView • MatLab • Igor-Pro • Origin • Datlab • Fortran 99 • CAD • Spice • WinSpice • L-edit • Microsoft Office • Adobe • Windows XP • Windows Vista • Windows 7.

Resumes

Resumes

Anton Sidorov Photo 1

Postgraduate

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Work:
Samara State University of Economics
Postgraduate
Education:
Samara State University of Economics
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Anton Sidorov

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Anton Sidorov Photo 3

Anton Sidorov Portland, OR

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Work:
Intel Corp.

Nov 2014 to 2000
Sr. Research and Development Engineer
Georgia Institute of Technology
Atlanta, GA
Mar 2013 to Nov 2014
Research Scientist I
GEORGIA INSTITUTE OF TECHNOLOGY
Atlanta, GA
Sep 2009 to Mar 2013
Post-doctoral fellow
UNIVERSITY OF LOUISVILLE
Louisville, KY
Aug 2003 to Aug 2009
Graduate Research Assistant/Teacher Assistant
PERM STATE UNIVERSITY

Aug 2001 to Jul 2003
Graduate Research Assistant
Undergraduate Research

Aug 1998 to Jul 2001
Research Assistant
Education:
GEORGIA INSTITUTE OF TECHNOLOGY
Atlanta, GA
2009 to 2013
Post Doctoral in Physics/Chemistry
UNIVERSITY OF LOUISVILLE
Louisville, KY
2005 to 2009
Ph.D. in Electrical and Computer Engineering
UNIVERSITY OF LOUISVILLE
Louisville, KY
2003 to 2005
M.S in Physics
PERM STATE UNIVERSITY
1998 to 2003
BS in Information systems and telecommunications
Skills:
Material Characterization Scanning Electron Microscopy (SEM): Supra 35VP (Zesis), Leo-1350, EVO (Zesis) and experience working with nano-manipulator Atomic Force Microscopy (AFM): XE-100 (Park instruments), NanoMan VS(Veeco), CP and M5 (Park Scientific instrument) Raman Spectroscopy: Micro Raman systems (Renishaw, Horiba, Bruker) Micro/Nano Fabrication Processes (clean room skills) Optical Lithography, E-Beam Lithography, RF/DC Sputtering, E-beam Evaporation, Wet/dry chemical etching, Wet/dry oxidation, Wafer doping Material Synthesis Chemical Vapor Deposition (CVD) Hot-Filament Chemical Vapor Deposition (HF-CVD) Transport Properties Measurement Electric characteristic measurements Thermal transport properties measurement (termo-electric power and thermal conductivity measurements) Magnetic characteristic (Magneto-resistance, Hall effect) Software and Programming C++, LabView, MatLab, Igor-Pro, Origin, Datlab, Fortran 99, CAD, Spice, WinSpice, L-edit, Microsoft Office, Adobe, Windows XP, Windows Vista, Windows 7.
Anton Sidorov Photo 4

Anton Sidorov

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Publications

Us Patents

Methods And Systems For Fabrication Of Graphene Nanoribbons

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US Patent:
7887888, Feb 15, 2011
Filed:
Jun 23, 2009
Appl. No.:
12/489903
Inventors:
Anton N. Sidorov - Louisville KY, US
P. John Ouseph - Louisville KY, US
Gamini Sumanasekera - Louisville KY, US
Assignee:
University of Louisville Research Foundation, Inc. - Louisville KY
International Classification:
B05D 1/04
US Classification:
427472, 427457, 427458
Abstract:
A method for fabricating graphene nanoribbons comprises the steps of providing a chamber with a first and a second cavity, which are separated by a divider that defines an opening to place the first cavity in fluid communication with the second cavity; positioning a graphite sample in the first cavity; positioning a container with a metal disposed therein in the second cavity; heating the container to expel a cloud of metal; injecting a gas into the second cavity to propel the cloud of metal through the opening and into the first cavity where it contacts the graphite sample to produce dislocation bands; removing the graphite sample from the chamber; and electrostatically depositing the dislocation bands on a substrate as graphene nanoribbons.

Method For Electrostatic Deposition Of Graphene On A Substrate

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US Patent:
20100233382, Sep 16, 2010
Filed:
Oct 9, 2008
Appl. No.:
12/248096
Inventors:
Gamini Sumanasekera - Louisville KY, US
Anton N. Sidorov - Louisville KY, US
P. J. Ouseph - Louisville KY, US
Mehdi M. Yazdanpanah - Louisville KY, US
Robert W. Cohn - Louisville KY, US
Assignee:
UNIVERSITY OF LOUISVILLE RESEARCH FOUNDATION, INC. - Louisville KY
International Classification:
B05D 1/00
US Classification:
427458
Abstract:
A method for electrostatic deposition of graphene on a substrate comprises the steps of securing a graphite sample to a first electrode; electrically connecting the first electrode to a positive terminal of a power source; electrically connecting a second electrode to a ground terminal of the power source; placing the substrate over the second electrode; and using the power source to apply a voltage, such that graphene is removed from the graphite sample and deposited on the substrate.

Broadband Reduced Graphite Oxide Based Photovoltaic Devices

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US Patent:
20170025557, Jan 26, 2017
Filed:
Apr 2, 2015
Appl. No.:
15/301182
Inventors:
- Atlanta GA, US
Anton Nickolaevich Sidorov - Atlanta GA, US
Alex Elder - Atlanta GA, US
Denis Aleksandrovich Sokolov - Mishawaka IN, US
International Classification:
H01L 31/032
H01L 31/18
H01L 31/0203
Abstract:
The embodiments of the disclosure relate generally to photovoltaic devices with broad band absorption in the solar light spectrum incident to Earth. The devices include integrated layers of graphite oxide and reduced graphite oxide, which exhibit intrinsic p/n junctions, which can be self-biasing and allow for production and separation of electron-hole pairs that can drive the current in the device. Descriptions of the devices and methods of making the structures are disclosed.

Amazon

Regional'naya Leksika Frantsuzskogo Yazyka: Stanovlenie, Razvitie, Zhiznesposobnost' I Perspektivy Regiolektov Vo Frantsii (Russian Edition)

Regional'naya leksika frantsuzskogo yazyka: Stanovlenie, razvitie, zhiznesposobnost' i perspektivy regiolektov vo Frantsii (Russian Edition)

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V dannoy knige analiziruetsya sud'ba frantsuzskikh regiolektov v sovremennoy romanistike. Issleduetsya ikh proiskhozhdenie, status, mesto i rol' v sisteme obshchefrantsuzskogo varianta yazyka, a takzhe perspektivy sushchestvovniya i razviiya v tselom. Izuchenie regiolektov pozvolyaet vospolnit' nedo...
Author

Anton Sidorov

Binding

Paperback

Pages

160

Publisher

LAP LAMBERT Academic Publishing

ISBN #

3848425874

EAN Code

9783848425877

ISBN #

1

This Is Not Available 040371

This is not available 040371

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This book is not available.
Author

Anton N Sidorov

Binding

Paperback

Pages

192

Publisher

ProQuest, UMI Dissertation Publishing

ISBN #

1244060372

EAN Code

9781244060371

ISBN #

2

Control profile
Anton N Sidorov from Severna Park, MD, age ~38 Get Report