Inventors:
Landon B. Vines - San Antonio TX
Felix H. Fujishiro - San Jose CA
Danny W. Echtle - San Antonio TX
Annette Garcia - Pleasanton TX
Assignee:
VLSI Technology, Inc. - San Jose CA
International Classification:
G01N 1700
Abstract:
A method of identifying a weakest interface where delamination is most likely to occur in a multi-layer dielectric film stack formed on a semiconductor wafer includes scribing processed layers including the multi-layer dielectric film stack with an applied force of a selected and constant magnitude, measuring the depth of a cavity formed in the processed layers by such scribing, and identifying the weakest interface by comparing the measured depth against the known depths of the interfaces between adjacent layers of the multi-layer dielectric film stack.