Inventors:
Anjaneya Modak - Sunnyvale CA, US
International Classification:
H01L021/4763
Abstract:
An improved method for making a semiconductor device is described. That method includes forming a first dielectric layer on a substrate, then etching a trench into the first dielectric layer. After filling the trench with a conductive material, a portion of the conductive material is removed to form a recessed conductive layer within the first dielectric layer. An upper barrier layer that comprises tantalum nitride and tantalum is then formed on the recessed conductive layer.