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Anjaneya Modak Phones & Addresses

  • 917 Cascade Dr, Sunnyvale, CA 94087 (408) 507-6439
  • Tempe, AZ
  • Santa Clara, CA
  • 917 Cascade Dr, Sunnyvale, CA 94087

Publications

Us Patents

Method Of Making A Semiconductor Device That Includes A Dual Damascene Interconnect

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US Patent:
20030003710, Jan 2, 2003
Filed:
Jun 29, 2001
Appl. No.:
09/895676
Inventors:
Anjaneya Modak - Sunnyvale CA, US
International Classification:
H01L021/4763
US Classification:
438/625000
Abstract:
An improved method for making a semiconductor device is described. That method includes forming a first dielectric layer on a substrate, then etching a trench into the first dielectric layer. After filling the trench with a conductive material, a portion of the conductive material is removed to form a recessed conductive layer within the first dielectric layer. An upper barrier layer that comprises tantalum nitride and tantalum is then formed on the recessed conductive layer.

Method Of Making A Semiconductor Device With Aluminum Capped Copper Interconnect Pads

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US Patent:
20030003711, Jan 2, 2003
Filed:
Jun 29, 2001
Appl. No.:
09/895522
Inventors:
Anjaneya Modak - Sunnyvale CA, US
International Classification:
H01L021/4763
H01L021/44
US Classification:
438/629000, 438/637000, 438/687000
Abstract:
A method for making a semiconductor device is described. That method includes forming a dielectric layer on a substrate, then etching a trench into the dielectric layer. After filling the trench with copper, a portion of the copper is removed to form a recessed copper plug within the dielectric layer. A capping layer that comprises aluminum is then formed on the recessed copper plug.
Anjaneya R Modak from Sunnyvale, CA, age ~59 Get Report