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Andrei Osinsky Phones & Addresses

  • 17107 Raleigh Ln, Eden Prairie, MN 55347 (952) 934-4456
  • Naples, FL
  • 17107 Raleigh Ln, Eden Prairie, MN 55347

Work

Position: Clerical/White Collar

Emails

Resumes

Resumes

Andrei Osinsky Photo 1

President And Chief Executive Officer

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Location:
7620 Executive Dr, Eden Prairie, MN 55344
Industry:
Semiconductors
Work:
Svt Associates Jan 2003 - Aug 2008
Manager of Device Development

Agnitron Technology, Inc. Jan 2003 - Aug 2008
President and Chief Executive Officer

Corning Incorporated May 2000 - Dec 2002
Senior Scientist

Emcore Corporation 1997 - 1998
Scientist
Education:
Colorado State University 2015 - 2015
Colorado State University 1994 - 1996
Af Ioffe Physical Technical Institute 1989 - 1994
Doctorates, Doctor of Philosophy, Electrical Engineering, Philosophy
Skills:
Thin Films
Semiconductor Industry
R&D
Gan
Nanotechnology
Characterization
Mocvd
Optics
Sensors
Photovoltaics
Design of Experiments
Spectroscopy
Materials Science
Manufacturing
Semiconductors
Engineering Management
Product Development
Metrology
Research and Development
Languages:
Russian
Andrei Osinsky Photo 2

Andrei Osinsky

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Location:
Eden Prairie, MN
Industry:
Semiconductors

Business Records

Name / Title
Company / Classification
Phones & Addresses
Andrei Osinsky
President
Agnitron Technology
Semiconductors · Mfg Semiconductors/Related Devices · Nonclassifiable Establishments
6595 Edenvale Blvd SUITE 180, Eden Prairie, MN 55346
14530 Martin Dr, Edina, MN 55344

Publications

Us Patents

High Temperature Light-Emitting Diodes

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US Patent:
20060081873, Apr 20, 2006
Filed:
Oct 4, 2005
Appl. No.:
11/243469
Inventors:
Andrei Osinsky - Eden Prairie MN, US
Jianwei Dong - Plymouth MN, US
Mohammed Kauser - Minneapolis MN, US
Brian Hertog - Minneapolis MN, US
Amir Dabiran - Chanhassen MN, US
Assignee:
SVT Associates, Inc. - Eden Prairie MN
International Classification:
H01L 29/732
US Classification:
257183000
Abstract:
A heterostructure semiconductor device capable of emitting electromagnetic radiation and having a junction with opposite conductivity type materials on either side thereof supported on a substrate with an active layer therebetween comprising zinc oxide and having a band gap energy that is less than that of either of the opposite conductivity type materials.
Andrei V Osinsky from Eden Prairie, MN Get Report