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Andre Gabriel Metzger

from La Jolla, CA
Age ~52
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Also known as:
Andre G Metzger, Andre P Metzger, Andrew G Metzger, Andre Matzger, Anore G Metzoer
Phone and address:
5382 Candlelight Dr, La Jolla, CA 92037
Related to:
Lucas A MetzgerRobert P Metzger, 85Silvia A Metzger, 81Linda C Metzger, 56Maia A MetzgerMarco E Metzger, 55
Connected to:
Al E Metzger, 75Alexa K Metzger, 33Aline K Metzger, 102Amanda Metzger, 42Amber L Metzger, 43Anna M Metzger, 58Blaine A Metzger, 69Britt L Metzger, 45Bryce A Metzger, 37Celine A Metzger, 93

Andre Metzger Phones & Addresses

  • 5382 Candlelight Dr, La Jolla, CA 92037
  • 5392 Candlelight Dr, La Jolla, CA 92037
  • 2464 Adrian St, Newbury Park, CA 91320 (805) 480-9447
  • Thousand Oaks, CA
  • Arcadia, CA
  • Akron, OH
  • Beaumont, CA
  • Riverside, CA
  • Ventura, CA

Publications

Us Patents

High Isolation, Low Power High Speed Multiplexer Circuit

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US Patent:
6636077, Oct 21, 2003
Filed:
Jun 11, 1999
Appl. No.:
09/330875
Inventors:
Charles E. Chang - Thousand Oaks CA
Andre Metzger - La Jolla CA
Assignee:
Conexant Systems, Inc. - Newport Beach CA
International Classification:
H03K 19082
US Classification:
326105, 327407
Abstract:
A high-isolation, low-power high-speed multiplexer circuit suitably includes a buffer stage and a current steering tree stage. By employing common select lines for both stages of the circuit, both the input buffer and the deselected channel provide cumulative isolation for the deselected channels.

Quiescent Current Control Circuit For Power Amplifiers

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US Patent:
7046087, May 16, 2006
Filed:
Aug 10, 2004
Appl. No.:
10/915279
Inventors:
Amish Naik - Los Angeles CA, US
Andre Metzger - La Jolla CA, US
Thomas L. Fowler - Moorpark CA, US
Assignee:
Skyworks Solutions, Inc. - Irvine CA
International Classification:
H03G 3/20
US Classification:
330136, 330296
Abstract:
According to one exemplary embodiment, a circuit arrangement includes a power amplifier configured to receive an RF input signal. The circuit arrangement further includes a control circuit configured to receive and convert the RF input signal to an output DC voltage. The control circuit includes a voltage amplifier coupled to a peak detector circuit, where the peak detector circuit outputs the output DC voltage. The circuit arrangement further includes an analog control bias circuit coupling the output DC voltage to a bias input of the power amplifier. The output DC voltage causes the power amplifier to have a quiescent current that increases in a way that is substantially logarithmic with respect to the amplitude of the RF input signal. An increase in the RF input power can cause a substantially linear increase in the output DC voltage, where the RF input power is measured in dBm.

Circuit For Controlling Power Amplifier Quiescent Current

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US Patent:
7193460, Mar 20, 2007
Filed:
Mar 27, 2006
Appl. No.:
11/390576
Inventors:
Amish Naik - Los Angeles CA, US
Andre Metzger - La Jolla CA, US
Thomas L. Fowler - Moorpark CA, US
Assignee:
Skyworks Solutions, Inc. - Irvine CA
International Classification:
H03G 3/20
US Classification:
330136, 330296, 330285
Abstract:
According to one exemplary embodiment, a circuit arrangement includes a power amplifier configured to receive an RF input signal. The circuit arrangement further includes a control circuit configured to receive and convert the RF input signal to an output DC voltage. The control circuit includes a voltage amplifier coupled to a peak detector circuit, where the peak detector circuit outputs the output DC voltage. The circuit arrangement further includes an analog control bias circuit coupling the output DC voltage to a bias input of the power amplifier. The output DC voltage causes the power amplifier to have a quiescent current that increases in a way that is substantially logarithmic with respect to the amplitude of the RF input signal. An increase in the RF input power can cause a substantially linear increase in the output DC voltage, where the RF input power is measured in dBm.

Circuit And Method For Biasing A Gallium Arsenide (Gaas) Power Amplifier

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US Patent:
7869775, Jan 11, 2011
Filed:
Aug 21, 2007
Appl. No.:
11/842333
Inventors:
Ziv Alon - Thousand Oaks CA, US
Shiaw W. Chang - Thousand Oaks CA, US
Andre Metzger - Newbury Park CA, US
Assignee:
Skyworks Solutions, Inc. - Woburn MA
International Classification:
H04B 1/04
H04M 1/00
US Classification:
4551271, 455572, 4553431
Abstract:
A circuit for biasing a gallium arsenide (GaAs) power amplifier includes a reference voltage generator circuit implemented in a gallium arsenide (GaAs) material system, a field effect transistor (FET) bias circuit implemented in the gallium arsenide material system and adapted to receive an output of the reference voltage generator circuit and adapted to provide an output to a radio frequency (RF) amplifier stage.

Circuit And Method For Generating A Reference Voltage

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US Patent:
8350418, Jan 8, 2013
Filed:
Oct 2, 2009
Appl. No.:
12/572337
Inventors:
Andre G. Metzger - Newbury Park CA, US
Anise M. Azizad - Winnetka CA, US
Aleksey Lyalin - Thousand Oaks CA, US
Peter Phu Tran - Corona CA, US
Assignee:
Skyworks Solutions, Inc. - Woburn MA
International Classification:
H02J 7/00
US Classification:
307150, 327540, 327574, 323273
Abstract:
A circuit for generating a reference voltage includes a first transistor configured to receive a reference system voltage, the first transistor configured as a current source, the first transistor configured to provide a current independent of the system voltage, a plurality of diode devices configured to receive the current provided by the first transistor, and a second transistor associated with the plurality of diode devices, the second transistor configured to compensate for process variations in the first transistor, such that the plurality of diode devices provides a reference voltage that is at least partially compensated for the process variations.

Circuit And Method For Biasing A Gallium Arsenide (Gaas) Power Amplifier

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US Patent:
8554161, Oct 8, 2013
Filed:
Dec 2, 2010
Appl. No.:
12/958453
Inventors:
Ziv Alon - Thousand Oaks CA, US
Shiaw W. Chang - Thousand Oaks CA, US
Andre Metzger - Newbury Park CA, US
Assignee:
Skyworks Solutions, Inc. - Wobum MA
International Classification:
H01Q 11/12
H04B 1/04
US Classification:
4551271, 4553431, 455572
Abstract:
A circuit for biasing a gallium arsenide (GaAs) power amplifier includes a reference voltage generator circuit implemented in a gallium arsenide (GaAs) material system, a field effect transistor (FET) bias circuit implemented in the gallium arsenide material system and adapted to receive an output of the reference voltage generator circuit and adapted to provide an output to a radio frequency (RF) amplifier stage.

Bias Control For Reducing Amplifier Power Consumption And Maintaining Linearity

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US Patent:
7262657, Aug 28, 2007
Filed:
Mar 21, 2005
Appl. No.:
11/085931
Inventors:
Keith Nellis - Sherman Oaks CA, US
Andre Metzger - La Jolla CA, US
Grant Small - Hiawatha IA, US
Michael L. Hageman - Ely IA, US
Terry J. Shie - Cedar Rapids IA, US
Kerry Burger - Chandler AZ, US
Assignee:
Skyworks Solutions, Inc. - Woburn MA
International Classification:
H03G 3/20
US Classification:
330133, 330136
Abstract:
A method and apparatus for biasing an amplifying device whereby the bias current tracks the input power or the power level of a control signal to thereby efficiently match the bias current with needs of the amplifying device. This method and apparatus overcomes the drawbacks of the prior art by biasing, not for maximum output power, but for the power level of the input signal or the control signal. In one embodiment a current conditioner operates in connection with the self adjusting biasing circuit to scale or adjust, potentially on an exponential basis, the biasing current for one or more amplifier stages. A cancellation current source may be configured within the bias circuit to cancel unneeded current to further minimize current consumption.

Continuous Tunable Lc Resonator Using A Fet As A Varactor

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US Patent:
20120235731, Sep 20, 2012
Filed:
Mar 22, 2012
Appl. No.:
13/427488
Inventors:
Bin Li - Camarillo CA, US
Andre G. Metzger - Newbury Park CA, US
Assignee:
SKYWORKS SOLUTIONS, INC. - Woburn MA
International Classification:
G05F 3/02
H01L 21/8248
H01Q 23/00
H01L 29/93
US Classification:
327537, 257312, 438234, 343745, 257E21695, 257E29344
Abstract:
A varactor includes a field effect transistor (FET) integrated with at least a portion of a bipolar junction transistor (BJT), in which a back gate of the FET shares an electrical connection with a base of the BJT, and in which a reverse voltage applied to the back gate of the FET creates a continuously variable capacitance in a channel of the FET.
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Andre Gabriel Metzger from La Jolla, CA, age ~52 Get Report