Resumes
Resumes
Anand Tulpule Phones & Addresses
-
2573 Lantana Ct, Chandler, AZ 85286 (480) 786-9502
-
643 Devon Rd, Gilbert, AZ 85234 (480) 839-5217
-
1011 W Nido Ave, Mesa, AZ 85210 (480) 839-5217
-
1850 S Alma School Rd #228, Mesa, AZ 85210 (480) 839-5217
-
Maricopa, AZ
Publications
Us Patents
Method For Forming A Stable Semiconductor Device Having An Arsenic Doped Rom Portion
View pageUS Patent:
56311788, May 20, 1997
Filed:
Jan 31, 1995
Appl. No.:
8/381387
Inventors:
John S. Vogel - Gilbert AZ
Ramesh V. Joshi - Mesa AZ
Anand M. Tulpule - Gilbert AZ
Ramesh V. Joshi - Mesa AZ
Anand M. Tulpule - Gilbert AZ
Assignee:
Motorola, Inc. - Schaumburg IL
International Classification:
H01L 21265
H01L 2170
H01L 2700
H01L 2170
H01L 2700
US Classification:
438200
Abstract:
A method for making stable arsenic doped semiconductor devices (11,53,56) using dry etching techniques includes forming a polycrystalline semiconductor layer (29) on a upper surface of a semiconductor substrate (12), and patterning the polycrystalline semiconductor layer (29) using a dry etch process such as a plasma etch process. The semiconductor substrate (12) is then exposed to an elevated temperature to substantially reduce any defects contiguous with the upper surface of semiconductor substrate (12) resulting from the dry etch process. Arsenic is then incorporated into the semiconductor substrate (12) to form N+ regions (44). Surface sensitive devices such as MOSFET devices (53,56) are then formed on or within the semiconductor substrate (12).