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Amy Matts Phones & Addresses

  • Highland, NY
  • Brooklyn, NY
  • Fishkill, NY
  • 15 Santa Anna Dr, Poughkeepsie, NY 12603 (845) 473-6020

Work

Position: Professional/Technical

Education

Degree: Graduate or professional degree

Emails

Publications

Us Patents

Process For Fabricating A Low Dielectric Composite Substrate

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US Patent:
52777251, Jan 11, 1994
Filed:
May 11, 1992
Appl. No.:
7/881448
Inventors:
John Acocella - Hopewell Junction NY
Peter A. Agostino - Canaan NY
Arnold I. Baise - Wappingers Falls NY
Richard A. Bates - Wappingers Falls NY
Ray M. Bryant - Poughquag NY
Jon A. Casey - Poughkeepsie NY
David R. Clarke - Katonah NY
George Czornyj - Poughkeepsie NY
Allen J. Dam - Pine Plains NY
Lawrence D. David - Wappingers Falls NY
Renuka S. Divakaruni - Ridgefield CT
Werner E. Dunkel - LaGrangeville NY
Ajay P. Giri - Poughkeepsie NY
James N. Humenik - LaGrangeville NY
Steven M. Kandetzke - Poughkeepsie NY
Daniel P. Kirby - Poughkeepsie NY
John U. Knickerbocker - Hopewell Junction NY
Sarah H. Knickerbocker - Hopewell Junction NY
Anthony Mastreani - Hopewell Junction NY
Amy T. Matts - Poughkeepsie NY
Robert W. Nufer - Hopewell Junction NY
Charles H. Perry - Poughkeepsie NY
Salvatore J. Scilla - Marlboro NY
Mark A. Takacs - Poughkeepsie NY
Lovell B. Wiggins - Hopewell Junction NY
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
C04B 3700
B05D 512
US Classification:
156 89
Abstract:
The cracking experienced during thermal cycling of metal:dielectric semiconductor packages results from a mismatch in thermal co-efficients of expansion. The non-hermeticity associated with such cracking can be addressed by backfilling the permeable cracks with a flexible material. Uniform gaps between the metal and dielectric materials can similarly be filled with flexible materials to provide stress relief, bulk compressibility and strength to the package. Furthermore, a permeable, skeletal dielectric can be fabricated as a fired, multilayer structure having sintered metallurgy and subsequently infused with a flexible, temperature-stable material to provide hermeticity and strength.

Process For Fabricating A Low Dielectric Composite Substrate

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US Patent:
51355957, Aug 4, 1992
Filed:
Mar 30, 1990
Appl. No.:
7/503495
Inventors:
John Acocella - Hopewell Junction NY
Peter A. Agostino - Canaan NY
Arnold I. Baise - Wappingers Falls NY
Richard A. Bates - Wappingers Falls NY
Ray M. Bryant - Poughquag NY
Jon A. Casey - Poughkeepsie NY
David R. Clarke - Katonah NY
George Czornyj - Poughkeepsie NY
Allen J. Dam - Pine Plains NY
Lawrence D. David - Wappingers Falls NY
Renuka S. Divakaruni - Ridgefield CT
Werner E. Dunkel - LaGrangeville NY
Ajay P. Giri - Poughkeepsie NY
James N. Humenik - LaGrangeville NY
Steven M. Kandetzke - Poughkeepsie NY
Daniel P. Kirby - Poughkeepsie NY
John U. Knickerbocker - Hopewell Junction NY
Sarah H. Knickerbocker - Hopewell Junction NY
Anthony Mastreani - Hopewell Junction NY
Amy T. Matts - Poughkeepsie NY
Robert W. Nufer - Hopewell Junction NY
Charles H. Perry - Poughkeepsie NY
Salvatore J. Scilla - Marlboro NY
Mark A. Takacs - Poughkeepsie NY
Lovell B. Wiggins - Hopewell Junction NY
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
C04B 3700
US Classification:
156 89
Abstract:
The cracking experienced during thermal cycling of metal:dielectric semiconductor packages results from a mismatch in thermal co-efficients of expansion. The non-hermeticity associated with such cracking can be addresssed by backfilling the permeable cracks with a flexible material. Uniform gaps between the metal and dielectric materials can similarly be filled with flexible materials to provide stress relief, bulk compressibility and strength to the package. Furthermore, a permeable, skeletal dielectric can be fabricated as a fired, multilayer structure having sintered metallurgy and subsequently infused with a flexible, temperature-stable material to provide hermeticity and strength.

Low Dielectric Composite Substrate

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US Patent:
51398516, Aug 18, 1992
Filed:
Mar 30, 1990
Appl. No.:
7/503493
Inventors:
John Acocella - Hopewell Junction NY
Arnold I. Baise - Wappingers Falls NY
Richard A. Bates - Wappingers Falls NY
Jon A. Casey - Poughkeepsie NY
David R. Clarke - Katonah NY
Renuka S. Divakaruni - Ridgefield CT
James N. Humenik - LaGrangeville NY
Steven M. Kandetzke - Poughkeepsie NY
Daniel P. Kirby - Poughkeepsie NY
John U. Knickerbocker - Hopewell Junction NY
Sarah H. Knickerbocker - Hopewell Junction NY
Amy T. Matts - Poughkeepsie NY
Robert W. Nufer - Hopewell Junction NY
Mark A. Takacs - Poughkeepsie NY
Lovell B. Wiggins - Hopewell Junction NY
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
B32B 900
US Classification:
428209
Abstract:
The cracking experienced during thermal cycling of metal:dielectric semiconductor packages results from a mismatch in thermal co-efficients of expansion. The non-hermeticity associated with such cracking can be addressed by backfilling the permeable cracks with a flexible material. Uniform gaps between the metal and dielectric materials can similarly be filled with flexible materials to provide stress relief, bulk compressibility and strength to the package. Furthermore, a permeable, skeletal dielectric can be fabricated as a fired, multilayer structure having sintered metallurgy and subsequently infused with a flexible, temperature-stable material to provide hermeticity and strength.
Amy T Matts from Highland, NY, age ~65 Get Report