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Alfred G Elliot

from Palo Alto, CA
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Related to:
Kathleen M Elliot, 66Sharon A Elliot, 84Jan Kueny, 58Brent D Elliot, 61Elliot A Grant, 85Megan E Kueny, 58Samuel C Elliot, 35
Connected to:
Darren D Elliot, 51Denise S Elliot, 59Ellie M Elliot, 85Erik F Elliot, 63Evelyn N Elliot, 53Francis L Elliot, 37Francois F Elliot, 41Jayson P Elliot, 54Keith J Elliot, 53Kris Elliot, 78

Alfred Elliot Phones & Addresses

  • 3712 Ortega Ct, Palo Alto, CA 94303 (650) 493-3596

Publications

Us Patents

Method For Hermetically Joining Plate And Shaft Devices Including Ceramic Materials Used In Semiconductor Processing

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US Patent:
20130181038, Jul 18, 2013
Filed:
Nov 20, 2012
Appl. No.:
13/681930
Inventors:
Alfred Grant Elliot - Palo Alto CA, US
Brent Donald Alfred Elliot - Cupertino CA, US
Frank Balma - Los Gatos CA, US
Richard Erich Schuster - Milpitas CA, US
Dennis George Rex - Williams OR, US
Alexander Veytser - Mountain View CA, US
Assignee:
Component Re-Engineering Company, Inc. - Santa Clara CA
International Classification:
B23K 1/00
US Classification:
228191, 228249, 228221
Abstract:
A method for the joining of ceramic pieces with a hermetically sealed joint comprising brazing a continuous layer of joining material between the two pieces. The wetting and flow of the joining material is controlled by the selection of the joining material, the joining temperature, the time at temperature, the joining atmosphere, and other factors. The ceramic pieces may be aluminum nitride and the pieces may be brazed with an aluminum alloy under controlled atmosphere. The joint material is adapted to later withstand both the environments within a process chamber during substrate processing, and the oxygenated atmosphere which may be seen within the shaft of a heater or electrostatic chuck.

High Speed Low Temperature Method For Manufacturing And Repairing Semiconductor Processing Equipment And Equipment Produced Using Same

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US Patent:
20130136878, May 30, 2013
Filed:
Jul 6, 2012
Appl. No.:
13/543727
Inventors:
Alfred Grant Elliot - Palo Alto CA, US
Dennis George Rex - Sunnyvale CA, US
Alexander Veytser - Mountain View CA, US
Brent Donald Alfred Elliot - Cupertino CA, US
Frank Balma - Los Gatos CA, US
Richard Erich Schuster - Nilpitas CA, US
International Classification:
B23K 31/02
B32B 1/08
B23P 6/00
US Classification:
428 346, 228101, 228221, 228121, 228191, 228119
Abstract:
A method for the joining of ceramic pieces into an assembly adapted to be used in semiconductor processing. The joined pieces are adapted to withstand the environments within a process chamber during substrate processing, chamber cleaning processes, and the oxygenated atmosphere which may be seen within the shaft of a heater or electrostatic chuck. The ceramic pieces may be aluminum nitride and the pieces may be brazed with aluminum. The joint material is adapted to withstand both the environments within a process chamber during substrate processing, and the oxygenated atmosphere which may be seen within the shaft of a heater or electrostatic chuck. The joint is adapted to provide a hermetic seal across the joint. The joined pieces are adapted to be separated at a later time should rework or replacement of one of the pieces be desired.

Semiconductor Processing Equipment With High Temperature Resistant Nickel Alloy Joints And Methods For Making Same

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US Patent:
20190291199, Sep 26, 2019
Filed:
Nov 28, 2018
Appl. No.:
16/203562
Inventors:
- Santa Clara CA, US
Guleid Hussen - San Francisco CA, US
Jason Stephens - San Francisco CA, US
Michael Parker - Brentwood CA, US
Alfred Grant Elliot - Palo Alto CA, US
International Classification:
B23K 1/00
B23K 1/19
B23K 35/28
C04B 35/581
C04B 37/00
H01L 21/683
Abstract:
A method for the joining of ceramic pieces with a hermetically sealed joint comprising brazing a layer of joining material between the two pieces. The ceramic pieces may be aluminum nitride or other ceramics, and the pieces may be brazed with Nickel and an alloying element, under controlled atmosphere. The completed joint will be fully or substantially Nickel with another element in solution. The joint material is adapted to later withstand both the environments within a process chamber during substrate processing, and the oxygenated atmosphere which may be seen within the interior of a heater or electrostatic chuck. Semiconductor processing equipment comprising ceramic and joined with a nickel alloy and adapted to withstand processing chemistries, such as fluorine chemistries, as well as high temperatures.
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Alfred G Elliot from Palo Alto, CA Get Report