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Alexey Kovalev Phones & Addresses

  • 1600 Surfside Dr, Lincoln, NE 68528 (402) 261-5662
  • Riverside, CA
  • College Station, TX
  • Los Angeles, CA
  • Bryan, TX

Resumes

Resumes

Alexey Kovalev Photo 1

Assistant Project Scientist At Ucr

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Position:
Assistant Project Scientist at University California, Riverside
Location:
Riverside, California
Industry:
Research
Work:
University California, Riverside since Nov 2008
Assistant Project Scientist

UCLA Nov 2008 - Dec 2010
Postdoc

Texas A&M University Oct 2006 - Oct 2008
Postdoc
Education:
Delft University of Technology 2002 - 2006
PhD, Mesoscopic Physics
Moscow Institute of Physics and Technology (State University) (MIPT) 1993 - 1999
MSc, Physics and Applied Mathematics
Interests:
Condensed Matter Physics Nanotechnology
Alexey Kovalev Photo 2

Assistant Professor

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Location:
Lincoln, NE
Industry:
Research
Work:
University of Nebraska–Lincoln
Assistant Professor

Ucla Nov 2008 - Dec 2010
Postdoc

Texas A&M University Oct 2006 - Oct 2008
Postdoc
Education:
Industrial Design Engineering, Tu Delft 2002 - 2006
Doctorates, Doctor of Philosophy, Physics
Moscow Institute of Physics and Technology (State University) (Mipt) 1993 - 1999
Master of Science, Masters, Physics, Applied Mathematics
Skills:
Condensed Matter Physics
Science
Nanotechnology
Spectroscopy
Characterization
Materials Science
Physics
Matlab
Simulations
Nanomaterials
Mathematical Modeling
Research
Scanning Electron Microscopy
Magnetics
Numerical Analysis
Interests:
Condensed Matter Physics
Condensed Matter Physics Nanotechnology
Nanotechnology
Condensed Matter Physicsnanotechnology

Publications

Us Patents

Magnetoelectric Memory Cells With Domain-Wall-Mediated Switching

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US Patent:
20180130511, May 10, 2018
Filed:
Nov 8, 2017
Appl. No.:
15/807369
Inventors:
- Lincoln NE, US
OLEG TCHERNYSHYOV - Baltimore MD, US
ALEXEY KOVALEV - Lincoln NE, US
DMITRI E. NIKONOV - Beaverton OR, US
Assignee:
Board of Regents of the University of Nebraska - Lincoln NE
The John Hopkins University - Baltimore MD
Intel Corporation - Santa Clara CA
International Classification:
G11C 11/16
H01L 43/08
H01L 43/10
H01L 27/22
Abstract:
A magnetoelectric memory cell with domain-wall-mediated switching is implemented using a split gate architecture. The split gate architecture allows a domain wall to be trapped within a magnetoelectric antiferromagnetic (MEAF) active layer. An extension of this architecture applies to multiple-gate linear arrays that can offer advantages in memory density, programmability, and logic functionality. Applying a small anisotropic in-plane shear strain to the MEAF can block domain wall precession to improve reliability and speed of switching.

Amazon

Chto Emu Gekuba

Chto Emu Gekuba

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Book by Kovalev, Alexey

Author

Alexey Kovalev

Binding

Paperback

Pages

172

Publisher

Clio & Co

ISBN #

1880247003

EAN Code

9781880247006

ISBN #

1

Alexey Kovalev from Lincoln, NE, age ~48 Get Report