Albert Alec Talin

6353286, Mar 5, 2002

Oct 8, 1999

09/414737

Albert Alec Talin - Scottsdale AZ
Bernard F. Coll - Fountain Hills AZ
Chenggang Xie - Phoenix AZ
Yi Wei - Chandler AZ
Troy A. Trottier - Mesa AZ

Motorola, Inc - Schaumburg IL

H01J 1924

313496, 313306

A field emission display ( ) includes an electron emitter structure ( ) designed to emit an emission current ( ), a phosphor ( ) disposed to receive at an electron-receiving surface ( ) emission current ( ), and a multi-layered barrier structure ( ) disposed on electron-receiving surface ( ) of phosphor ( ). Multi-layered barrier structure ( ) of the preferred embodiment includes an aluminum layer ( ) disposed on electron-receiving surface ( ) of phosphor ( ) and a carbon layer ( ) disposed on aluminum layer ( ).

6364730, Apr 2, 2002

Jan 18, 2000

09/484930

James E. Jaskie - Scottsdale AZ
Albert Alec Talin - Scottsdale AZ
Paul VonAllmen - Mesa AZ
Bernard F. Coll - Fountain Hills AZ
Kathleen Anne Tobin - San Antonio TX

Motorola, Inc. - Schaumburg IL

H01J 902

445 24, 313309, 345 752

A method for operating a field emission device ( ) having an electron emitter ( ) includes the steps of providing an emitter-enhancing electrode ( ) proximate to electron emitter ( ), causing emitter-enhancing electrode ( ) to emit electrons, and causing the electrons emitted by emitter-enhancing electrode ( ) to be received by electron emitter ( ). A method for fabricating a field emission device ( ) includes the steps of forming a layer ( ) of dielectric material, forming emitter-enhancing electrode ( ) on layer ( ) of dielectric material, forming an enhanced-emission structure ( ) in emitter-enhancing electrode ( ), removing a portion of layer ( ) of dielectric material proximate to enhanced-emission structure ( ) to form a well ( ), and forming electron emitter ( ) within well ( ).

6373174, Apr 16, 2002

Dec 10, 1999

09/459119

Albert Alec Talin - Scottsdale AZ
Curtis D. Moyer - Phoenix AZ
Kenneth A. Dean - Phoenix AZ
Jeffrey H. Baker - Chandler AZ
Steven A. Voight - Gilbert AZ

Motorola, Inc. - Schaumburg IL

H01J 102

313309, 313310, 313351, 313495, 313497, 445 24

A field emission device ( ) includes a substrate ( ), a cathode ( ) formed thereon, a plurality of electron emitters ( ) and a plurality of gate electrodes ( ) proximately disposed to the plurality of electron emitters ( ) for effecting electron emission therefrom, a dielectric layer ( ) having a major surface ( ), a surface passivation layer ( ) formed on the major surface ( ), and an anode ( ) spaced from the gate electrodes ( ).

6400068, Jun 4, 2002

Jan 18, 2000

09/484665

James E. Jaskie - Scottsdale AZ
Albert Alec Talin - Scottsdale AZ
Bernard F. Coll - Fountain Hills AZ
Kathleen Anne Tobin - San Antonio TX

Motorola, Inc. - Schaumburg IL

H01J 1304

313309, 313306

A field emission device ( ) includes an electron emitter ( ) and an emitter-enhancing electrode ( ) having an enhanced-emission structure ( ), which is disposed proximate to electron emitter ( ). Enhanced-emission structure ( ) is embodied by, for example, each of the following structures: a tapered portion ( ) of emitter-enhancing electrode ( ), an electron-emissive edge ( ) that is generally parallel to an axis ( ) of electron emitter ( ), a combination of a conductive layer ( ) and an electron-emissive layer ( ) that is disposed proximate to an edge ( ) of conductive layer ( ), and an electron-emissive layer ( ) having a thickness of less than about 500 angstroms.

6410101, Jun 25, 2002

Feb 16, 2000

09/505124

James E. Jaskie - Scottsdale AZ
Albert Alec Talin - Scottsdale AZ

Motorola, Inc. - Schaumburg IL

C23C 1406

427524, 427525, 427534, 427577, 427 77, 427 78, 20419215, 2041923, 20419238

A method for scrubbing and passivating an anode plate ( ) of a field emission display ( ) includes the steps of providing a scrubbing passivation material ( ); imparting to scrubbing passivation material ( ) an energy selected to cause removal of a contamination layer ( ) from anode plate ( ); causing scrubbing passivation material ( ) to be received by contamination layer ( ), thereby removing contamination layer ( ); and depositing at least a portion of scrubbing passivation material ( ) on anode plate ( ), thereby forming a passivation layer ( ).

6573642, Jun 3, 2003

Jan 26, 2000

09/491357

Paul VonAllmen - Mesa AZ
Bernard F. Coll - Fountain Hills AZ
Albert Alec Talin - Scottsdale AZ

Motorola, Inc. - Schaumburg IL

H01J 1304

313309, 313496

A field emission device ( ) includes an electron emitter structure ( ) having a deuteride layer ( ), which defines a surface ( ) of electron emitter structure ( ). Deuteride layer ( ) is disposed upon an electron emitter ( ), which is made from a metal. Deuteride layer ( ) is a deuteride of the metal from which electron emitter ( ) is made. A method for conditioning field emission device ( ) includes the step of providing a contaminated cathode structure ( ), which has a contaminated emitter structure ( ). The method further includes the step of causing deuterium to react with a metal oxide layer ( ) of emitter structure ( ), so that the deuterium replaces the oxygen of metal oxide layer ( ).

6656339, Dec 2, 2003

Aug 29, 2001

09/942496

Albert A. Talin - Scottsdale AZ
Bernard F. Coll - Fountain Hills AZ
Kenneth A. Dean - Phoenix AZ
Matthew Stainer - Goleta CA

Motorola, Inc. - Schaumburg IL

C25D 1500

205109, 205157, 205159, 205162, 205191, 205192, 205193, 205333, 427 64, 427 69, 4272491, 42724911, 423414

Methods of forming a nano-supported catalyst on a substrate and at least one carbon nanotube on the substrate are comprised of configuring a substrate with an electrode ( ), immersing the substrate with the electrode into a solvent containing a first metal salt and a second metal salt ( ) and applying a bias voltage to the electrode such that a nano-supported catalyst is at least partly formed with the first metal salt and the second metal salt on the substrate at the electrode ( ). In addition, the method of forming at least one carbon nanotube is comprised of conducting a chemical reaction process such as catalytic decomposition, pyrolysis, chemical vapor deposition, or hot filament chemical vapor deposition o grow at least one nanotube on the surface of the nano-supported catalyst ( ).

6672925, Jan 6, 2004

Aug 17, 2001

09/932642

Albert Alec Talin - Scottsdale AZ
James E. Jaskie - Scottsdale AZ
Bernard F. Coll - Fountain Hills AZ

Motorola, Inc. - Schaumburg IL

H01J 900

445 49, 313346 R, 445 24

A vacuum microelectronic device ( ) emits electrons ( ) from surfaces of nanotube emitters ( ). Extracting electrons from the surface of each nanotube emitter ( ) results is a small voltage variation between each emitter utilized in the device ( ). Consequently, the vacuum microelectronic device ( ) has a more controllable turn-on voltage and a consistent current density from each nanotube emitter ( ).