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Alan Swanson Phones & Addresses

  • Lovell, ME
  • Tewksbury, MA
  • Bridgton, ME
  • Lisbon, ME
  • 30 Turgeon St, Lewiston, ME 04240 (207) 330-1967
  • Auburn, ME
  • Milton, MA
  • Atlanta, GA
  • Wilmington, MA
  • Brockton, MA

Professional Records

License Records

Alan J Swanson

License #:
557002820 - Expired
Issued Date:
Mar 9, 2004
Expiration Date:
Sep 30, 2005
Type:
Associate Real Estate Trainee Appraiser

Lawyers & Attorneys

Alan Swanson Photo 1

Alan Swanson - Lawyer

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ISLN:
903296630
Admitted:
1961
University:
Northwestern University, B.A., 1957
Law School:
Northwestern University, J.D., 1961

Resumes

Resumes

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Alan Swanson

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Location:
Lancaster, Pennsylvania
Industry:
Real Estate
Skills:
Manufacturing
Operational Excellence
Operations Management
Lean Manufacturing
Entrepreneurship
Alan Swanson Photo 3

Prinicpal Software Engineer At _

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Location:
Greater Boston Area
Industry:
Computer Software
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Alan Swanson

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Alan Swanson Photo 5

Alan Swanson

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Skills:
Microsoft Office
Management
Microsoft Excel
Microsoft Word
Research
Powerpoint
Alan Swanson Photo 6

Alan Swanson

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Work:
T.e.n Team Effort Network 2000 - 2013
Private Business Man
Skills:
Microsoft Excel
Microsoft Office
Customer Service
Strategic Planning
Microsoft Word
Public Speaking
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Alan Swanson

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Alan Swanson Photo 8

Alan Swanson

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Alan Swanson Photo 9

Alan Swanson

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Business Records

Name / Title
Company / Classification
Phones & Addresses
Alan Swanson
Incorporator
HANCOCK ANIMAL CLINIC, INC

Publications

Us Patents

Selective Epitaxial Etch Planar Processing For Gallium Arsenide Semiconductors

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US Patent:
44267673, Jan 24, 1984
Filed:
Jan 11, 1982
Appl. No.:
6/338204
Inventors:
Alan W. Swanson - Marlboro MA
Charles R. Snider - Southborough MA
Frank H. Spooner - Concord MA
Assignee:
Sperry Cororation - New York NY
International Classification:
H01L 2120
H01L 21302
US Classification:
29571
Abstract:
A method of fabricating gallium arsenide circuits or devices in which source and drain contact areas are deposited using vapor phase epitaxy techniques through holes in a refractory mask. Selected areas of a refractory mask are etched away to expose a region of active gallium arsenide material in which holes are formed by a chemical or plasma etch. These holes are then filled with highly doped vapor phase epitaxially grown gallium arsenide to provide drain and source contact regions. In further steps additional regions of the refractory mask are etched away to define gate regions. Metallization and lift-off may then occur in a single step to provide contacts to gate, drain and source regions and a planar surface for further device processing.

Isbn (Books And Publications)

Literature and the Immigrant Community: The Case of Arthur Landfors

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Author

Alan Swanson

ISBN #

0809315904

Alan P Swanson from Lovell, MEDeceased Get Report