Resumes
Resumes
Ailian Zhao Phones & Addresses
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9402 Sharpview Dr, Houston, TX 77036
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Oklahoma City, OK
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2320 Savannah Blvd, Titusville, FL 32780
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Milpitas, CA
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Edmond, OK
Publications
Us Patents
Method For Forming Self-Aligned Phase-Change Semiconductor Diode Memory
View pageUS Patent:
8455298, Jun 4, 2013
Filed:
Aug 18, 2009
Appl. No.:
12/543086
Inventors:
Mac D. Apodaca - San Jose CA, US
Ailian Zhao - Boxborough MA, US
Jenn C. Chow - San Jose CA, US
Thomas Brown - San Jose CA, US
Lisa Ceder - Hollister CA, US
Ailian Zhao - Boxborough MA, US
Jenn C. Chow - San Jose CA, US
Thomas Brown - San Jose CA, US
Lisa Ceder - Hollister CA, US
Assignee:
Contour Semiconductor, Inc. - Billerica MA
International Classification:
H01L 21/06
US Classification:
438102, 438430, 438629, 257E21589
Abstract:
A method for fabricating a memory device includes depositing a phase-change and/or a resistive change material. The memory device is formed photolithographically using sixteen or fewer masks.
Phase-Change Material Memory Cell
View pageUS Patent:
20100096610, Apr 22, 2010
Filed:
Oct 19, 2009
Appl. No.:
12/581555
Inventors:
Hsingya A. Wang - San Jose CA, US
Daniel R. Shepard - North Hampton NH, US
Mac D. Apodaca - San Jose CA, US
Ailian Zhao - Boxborough MA, US
Daniel R. Shepard - North Hampton NH, US
Mac D. Apodaca - San Jose CA, US
Ailian Zhao - Boxborough MA, US
International Classification:
H01L 47/00
H01L 21/06
H01L 21/06
US Classification:
257 2, 438482, 257E47001, 257 42, 438102, 257E29087, 257E21068
Abstract:
A memory cell includes a current-steering device, a phase-change material disposed thereover, and a heating element and/or a cooling element.