Adrian Kiermasz

6969307, Nov 29, 2005

Mar 30, 2004

10/812824

Adrian Kiermasz - Union City CA, US

Lam Research Corporation - Fremont CA

B24B001/00

451 56, 451 10, 451 11, 451 36, 451443, 451446

A pad conditioning system for conditioning a polishing pad in conjunction with polishing of a workpiece includes a pad conditioning head coupled with a positioning unit. The pad conditioning head includes a conditioning surface that is configured to be moved into contact with a polishing pad to condition the polishing pad. The pad conditioning system also includes a polishing liquid supply port disposed in the conditioning surface. The polishing liquid supply port is configured to selectively discharge polishing liquid during the conditioning operation. The discharged polishing liquid is worked into the polishing pad by the pad conditioning head during the conditioning operation. A workpiece, such as a semiconductor wafer, that is also moved into contact with the polishing pad is polished using the discharged polishing liquid.

7018273, Mar 28, 2006

Jun 27, 2003

10/607613

Adrian Kiermasz - Union City CA, US
Miguel A. Saldana - Fremont CA, US

Lam Research Corporation - Fremont CA

B24B 1/00

451 41, 451330

A platen is provided for use in a chemical mechanical planarization (CMP) system. The platen is provided with diaphragms that overcome a fluid-conservation problem experienced in prior air-bearing platens. The diaphragms enable a removal profile to be manipulated by configuring one or more diaphragms to control localized polishing pressure while capturing free-flowing fluid that is input to the apparatus. The diaphragms also minimize loss of normally-free-flowing fluid from a fluid-bearing.

7086936, Aug 8, 2006

Dec 22, 2003

10/743923

Adrian Kiermasz - Union City CA, US

Lam Research Corporation - Fremont CA

B24B 9/00

451168, 451296

A linear chemical mechanical planarization (CMP) belt pad includes a first portion comprised of a first pad material, e. g. , polyurethane, and a second portion comprised of a second pad material, e. g. , porous rubber. The first portion has a first end and a second end. The second portion is situated between the first and second ends of the first portion and extends substantially across a width of the belt pad. Alternatively, the second portion may be embedded in the first portion such that a peripheral surface of the second portion is surrounded by a surface of the first portion. A linear CMP system and a method for planarizing a wafer in a single linear CMP module also are described.

7459100, Dec 2, 2008

Dec 22, 2004

11/022983

Adrian Kiermasz - Union City CA, US
Tamarak Pandhumsoporn - Fremont CA, US
Alferd Cofer - Fremont CA, US

Lam Research Corporation - Fremont CA

C23F 1/00

216 67

In a plasma processing system, a method for optimizing etching of a substrate is disclosed. The method includes selecting a first plasma process recipe including a first process variable, wherein changing the first process variable by a first amount optimizes a first substrate etch characteristic and aggravates a second substrate etch characteristic. The method also includes selecting second plasma process recipe including a second process variable, wherein changing the second process variable by a second amount aggravates the first substrate etch characteristic and optimizes the second substrate etch characteristic. The method further includes positioning a substrate on a chuck in a plasma processing chamber; and striking a plasma within the plasma processing chamber. The method also includes alternating between the first plasma recipe and the second plasma recipe, wherein upon completion of the alternating, the first substrate etch characteristic and the second substrate etch characteristic are substantially optimized.