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Abhijit Raghunathan Phones & Addresses

  • 14008 Laurinburg Dr, Austin, TX 78717
  • 4700 Staggerbrush Rd, Austin, TX 78749
  • 4701 Staggerbrush Rd, Austin, TX 78749
  • San Antonio, TX
  • Selma, TX
  • Houston, TX
  • 7733 Louis Pasteur Dr APT 12, San Antonio, TX 78229

Work

Company: Advanced micro devices Nov 2009 Position: Product development engineer

Education

School / High School: Cullent College of Engineering, University of Houston, Main Campus 2004 Specialities: Master of Science in Electrical and Computer Engineering

Industries

Semiconductors

Public records

Vehicle Records

Abhijit Raghunathan

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Address:
7733 Louis Pasteur Dr APT 127, San Antonio, TX 78229
VIN:
KMHDU4AD2AU910379
Make:
HYUNDAI
Model:
ELANTRA
Year:
2010

Resumes

Resumes

Abhijit Raghunathan Photo 1

Abhijit Raghunathan Austin, TX

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Work:
ADVANCED MICRO DEVICES

Nov 2009 to 2000
Product Development Engineer

SPANSION LLC

Jan 2007 to Oct 2009
Product Development Engineer

Education:
Cullent College of Engineering, University of Houston, Main Campus
2004 to 2006
Master of Science in Electrical and Computer Engineering

University of Madras
Chennai, Tamil Nadu
2000 to 2004
Bachelor of Engineering in Electrical and Electronics Engineering

Abhijit Raghunathan Photo 2

Abhijit Raghunathan

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Position:
Senior Product Development Engineer at AMD
Location:
Austin, Texas Area
Industry:
Semiconductors
Work:
AMD since Nov 2009
Senior Product Development Engineer

Publications

Us Patents

Room Temperature Drift Suppression Via Soft Program After Erase

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US Patent:
20090135659, May 28, 2009
Filed:
Nov 27, 2007
Appl. No.:
11/945785
Inventors:
Gwyn Robert Jones - Sunnyvale CA, US
Mark W. Randolph - San Jose CA, US
John Darilek - Bastrop TX, US
Sean O'Mullan - Austin TX, US
Jacob Marcantel - Dripping Spring TX, US
Rick Anundson - Austin TX, US
Adam Shackleton - Austin TX, US
Xiaojian Chu - Austin TX, US
Abhijit Raghunathan - Austin TX, US
Asif Arfi - Austin TX, US
Gulzar Ahmed Kathawala - Santa Clara CA, US
Zhizheng Liu - San Jose CA, US
Sung-Chul Lee - Cupertino CA, US
Assignee:
SPANSION LLC - Sunnyvale CA
International Classification:
G11C 16/06
US Classification:
36518529
Abstract:
Providing for suppression of room temperature electronic drift in a flash memory cell is provided herein. For example, a soft program pulse can be applied to the flash memory cell immediately after an erase pulse. The soft program pulse can help to mitigate dipole effects caused by non-combined electrons and holes in the memory cell. Specifically, by utilizing a relatively low gate voltage, the soft program pulse can inject electrons into the flash memory cell proximate a distribution of uncombined holes associated with the erase pulse in order to facilitate rapid combination of such particles. Rapid combination in this manner reduces dipole effects caused by non-combined distributions of opposing charge within the memory cell, reducing room temperature program state drift
Abhijit M Raghunathan from Austin, TX, age ~43 Get Report