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Abhijeet V Chavan

from Rockville, MD
Age ~64
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Also known as:
Ashi V Chavan, Abhijeet V Chvan, Abhi Chavan, Chavan Abhijeet
Phone and address:
1402 Piccard Dr, Rockville, MD 20850
(763) 486-0434
Related to:
Vik V Chavan, 64
Connected to:
Akshara Chavan, 40Arati Chavan, 42Ashwini N Chavan, 48Crystal P Chavana, 40Darshana V Chavan, 48Dhaval Chavan, 38Elias M Chavana, 41Gautam R Chavan, 41Harshada C Chavan, 39Jacob R Chavan, 42

Abhijeet Chavan Phones & Addresses

  • 1402 Piccard Dr, Rockville, MD 20850 (763) 486-0434
  • Gaithersburg, MD
  • 6491 Ranchview Ln N, Osseo, MN 55311 (763) 383-8492
  • Maple Grove, MN
  • 13470 Violet Way, Carmel, IN 46032
  • 1908 Hogan Dr, Kokomo, IN 46902
  • Roseville, MN

Resumes

Resumes

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Abhijeet Chavan

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Associate Research Scientist

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Work:

Associate Research Scientist
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Abhijeet Chavan

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Education:
Willingdon College
Skills:
Microsoft Office
Management
Microsoft Excel
Microsoft Word
Research
Powerpoint
Sales
Leadership
Training
Photoshop
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Abhijeet Chavan

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Publications

Wikipedia References

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Abhijeet Chavan

About:
Born:

Mumbai , Maharashtra , India

Work:
Position:

Indian film actor • Marathi stage actor • Rickshaw Driver • Bouncer

Education:
Area of science:

Television

Skills & Activities:
Master status:

Student

Activity:

Comedy • Films

Abhijeet Chavan Photo 6

Abhijeet Chavan

Us Patents

Non-Linear Temperature Compensation Circuit

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US Patent:
6566849, May 20, 2003
Filed:
Feb 12, 2002
Appl. No.:
10/075130
Inventors:
Abhijeet V. Chavan - Carmel IN
Gregory J. Manlove - Kokomo IN
Assignee:
Delphi Technologies, Inc. - Troy MI
International Classification:
G05F 304
US Classification:
323312, 323907
Abstract:
A non-linear temperature compensation circuit ( ) is provided for generating at least dual-slope characteristics responsive to changes in operating temperature of the compensation circuit. The compensation circuit includes a temperature dependent current generator circuit ( ) for generating at least one output (I ) substantially proportional to changes in the temperature of the circuit, a current-based dual-slope drift generator ( ) for generating a current proportional to absolute temperature, and a summing means ( ) for summing both current outputs and generating a compensation drift voltage. The temperature dependent current generator includes a sub-circuit having a first current generator that generates a current (I ) that is relatively independent of temperature, and a second current generator that generates a second current (I ) that decreases with increases in temperature. The two currents are compared and a non-zero output current (I ) is generated if the second current (I ) exceeds the first current (I ), which output current (I ) decreases with increases in temperature.

Monolithic Fully-Integrated Vacuum Sealed Bicmos Pressure Sensor

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US Patent:
6713828, Mar 30, 2004
Filed:
Dec 17, 1999
Appl. No.:
09/465961
Inventors:
Abhijeet V. Chavan - Carmel IN
Kensall D. Wise - Ann Arbor IN
Assignee:
Delphi Technologies, Inc. - Troy MI
International Classification:
H01L 2984
US Classification:
257415, 257419
Abstract:
A semiconductor device ( ) comprises a substrate ( ), a first semiconductor region including a recessed area defining a first cavity ( ) between the substrate ( ) and the first semiconductor region, an electrical transducer ( ) positioned within the first cavity ( ), a second semiconductor. region including a recessed area defining a second cavity ( ) between the substrate ( ) and the second semiconductor region, an electrical circuit ( ) positioned within the second cavity ( ), and at least one electrode connecting the electrical transducer ( ) and the electrical device ( ). The semiconductor device ( ) includes a first external electrode and a second external electrode formed on the substrate ( ) and a sealing layer extending around the perimeter of the cavities and sealing the semiconductor regions to the substrate ( ). The sealing layer ( ) includes a first electrical connection region and a second electrical connection region that are electrically isolated from each other. The first connection region electrically connects a first internal electrode to the first external electrode and the second connection region electrically connects a second internal electrode to the second external electrode through the sealing layer ( ).

Monolithically-Integrated Infrared Sensor

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US Patent:
6793389, Sep 21, 2004
Filed:
Oct 18, 2002
Appl. No.:
10/065447
Inventors:
Abhijeet V. Chavan - Carmel IN
James H. Logsdon - Kokomo IN
Dan W. Chilcott - Greentown IN
Han-Sheng S. Lee - Bloomfield Hills MI
David K. Lambert - Sterling Heights MI
Timothy A. Vas - Kokomo IN
Assignee:
Delphi Technologies, Inc. - Troy MI
International Classification:
G01K 702
US Classification:
374179, 374163, 374183, 374121, 136213
Abstract:
An integrated sensor comprising a thermopile transducer and signal processing circuitry that are combined on a single semiconductor substrate, such that the transducer output signal is sampled in close vicinity by the processing circuitry. The sensor comprises a frame formed of a semiconductor material that is not heavily doped, and with which a diaphragm is supported. The diaphragm has a first surface for receiving thermal (e. g. , infrared) radiation, and comprises multiple layers that include a sensing layer containing at least a pair of interlaced thermopiles. Each thermopile comprises a sequence of thermocouples, each thermocouple comprising dissimilar electrically-resistive materials that define hot junctions located on the diaphragm and cold junctions located on the frame. The signal processing circuitry is located on the frame and electrically interconnected with the thermopiles. The thermopiles are interlaced so that the output of one of the thermopiles increases with increasing temperature difference between the hot and cold junctions thereof, while the output of the second thermopile decreases with increasing temperature difference between its hot and cold junctions.

Process For A Monolithically-Integrated Micromachined Sensor And Circuit

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US Patent:
6828172, Dec 7, 2004
Filed:
Oct 18, 2002
Appl. No.:
10/065448
Inventors:
Abhijeet V. Chavan - Carmel IN
James H. Logsdon - Kokomo IN
Dan W. Chilcott - Greentown IN
John C. Christenson - Kokomo IN
Robert K. Speck - Kokomo IN
Assignee:
Delphi Technologies, Inc. - Troy MI
International Classification:
H01I 2100
US Classification:
438 50, 438 53, 438756
Abstract:
A process using integrated sensor technology in which a micromachined sensing element and signal processing circuit are combined on a single semiconductor substrate to form, for example, an infrared sensor. The process is based on modifying a CMOS process to produce an improved layered micromachined member, such as a diaphragm, after the circuit fabrication process is completed. The process generally entails forming a circuit device on a substrate by processing steps that include forming multiple dielectric layers and at least one conductive layer on the substrate. The dielectric layers comprise an oxide layer on a surface of the substrate and at least two dielectric layers that are in tension, with the conductive layer being located between the two dielectric layers. The surface of the substrate is then dry etched to form a cavity and delineate the diaphragm and a frame surrounding the diaphragm. The dry etching step terminates at the oxide layer, such that the diaphragm comprises the dielectric layers and conductive layer.

Surface-Mount Package For An Optical Sensing Device And Method Of Manufacture

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US Patent:
6844606, Jan 18, 2005
Filed:
Oct 18, 2002
Appl. No.:
10/065446
Inventors:
James H. Logsdon - Kokomo IN, US
Abhijeet V. Chavan - Carmel IN, US
Hamid R. Borzabadi - Noblesville IN, US
Assignee:
Delphi Technologies, Inc. - Troy MI
International Classification:
H01L 2302
US Classification:
257434, 257432, 257680, 257703, 257704, 2503381, 2503384
Abstract:
An optical sensor package capable of being surface mounted, and in a form that enables multiple packages to be fabricated simultaneously and then array tested in a wafer stack prior to singulation. The package comprises a chip carrier, a device chip electrically and mechanically connected to a first surface of the chip carrier with solder connections, and a capping chip secured to the chip carrier to hermetically enclose the device chip. The device chip has an optical sensing element on a surface thereof, while the capping chip has means for enabling radiation to pass therethrough to the device chip. The chip carrier includes conductive vias that are electrically connected to the solder connections of the device chip and extend through the chip carrier to bond pads on a second surface of the chip carrier, enabling the package to be surface mounted with solder connections to a suitable substrate.

Method Of Attaching A Flip Chip Device And Circuit Assembly Formed Thereby

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US Patent:
7038321, May 2, 2006
Filed:
Apr 29, 2005
Appl. No.:
10/908162
Inventors:
Abhijeet V. Chavan - Carmel IN, US
Jeffrey A. Mars - Kokomo IN, US
Ian D. Jay - Logansport IN, US
Johnna L. Wyant - Kokomo IN, US
David W. Ihms - Russiaville IN, US
John K. Isenberg - Rossville IN, US
Roger E. Worl - Russiaville IN, US
Assignee:
Delphi Technologies, Inc. - Troy MI
International Classification:
H01L 23/52
H01L 23/48
H01L 29/40
US Classification:
257778, 257678, 257414, 257415, 257728, 257782, 257786, 438124, 438126, 438127, 310313 R, 310340, 361772
Abstract:
A method of flip-chip mounting a circuit device to a substrate in a manner that avoids damage and impairment of a fragile or otherwise sensitive element on the device facing the substrate, and a circuit assembly produced thereby. The assembly includes a substrate having at least two sets of bonding sites spaced apart from each other to define an intermediate surface region therebetween. The device is attached to the bonding sites with solder connections, with the solder connections being present on a surface of the device that faces the substrate and on which the element is present so that the element overlies the intermediate surface region of the substrate. An underfill material is present between the device and the substrate and encapsulates the solder connections. The underfill material is separated from the intermediate surface region of the substrate so that the underfill material does not contact the element.

Method And Apparatus For Testing An Infrared Sensor

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US Patent:
7119326, Oct 10, 2006
Filed:
Dec 17, 2004
Appl. No.:
10/905151
Inventors:
James H. Logsdon - Kokomo IN, US
Abhijeet V. Chavan - Maple Grove MN, US
Michael P. Donahue - Kokomo IN, US
Deron K. Slaughter - Kokomo IN, US
Assignee:
Delphi Technologies, Inc. - Troy MI
International Classification:
G01D 18/00
G12B 13/00
US Classification:
2502521
Abstract:
A method and apparatus for evaluating the functionality and sensitivity of an infrared sensor to infrared radiation. The method and apparatus are adapted for testing an infrared sensor having a diaphragm containing a heating element and a transducer that generates an output responsive to temperature. The method entails placing the infrared sensor in a controlled environment, and then exposing the diaphragm of the sensor to different levels of thermal radiation so as to obtain outputs of the transducer at different output levels. In the absence of exposure of the diaphragm to thermal radiation, flowing current through the heating element at different input levels so that the output of the transducer returns to the different output levels obtained using thermal radiation, the input difference between the input levels can be computed and used to assess the functionality and the sensitivity of the sensor.

Acoustic Communication Transducer In Implantable Medical Device Header

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US Patent:
7570998, Aug 4, 2009
Filed:
Jul 20, 2007
Appl. No.:
11/780903
Inventors:
Cheng Zhang - Vadnais Heights MN, US
Thomas W. Piaget - Minneapolis MN, US
Abhijeet V. Chavan - Maple Grove MN, US
Keith R. Maile - New Brighton MN, US
Ron A. Balczewski - Bloomington MN, US
Assignee:
Cardiac Pacemakers, Inc. - St. Paul MN
International Classification:
A61N 1/00
US Classification:
607 18
Abstract:
An implantable medical device is adapted for implantation into body tissue. The implantable medical device comprises a housing and a header coupled to the housing. A cavity is located in the header. An ultrasonic transducer adapted to transmit acoustic waves at a communication frequency is located in the cavity, and a coupling surface is interposed between the ultrasonic transducer and the body tissue and is acoustically coupled with the body tissue.
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Abhijeet V Chavan from Rockville, MD, age ~64 Get Report