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Abdelouahab Ziani Phones & Addresses

  • Cupertino, CA
  • Garden Way, Santa Clara, CA 95050
  • 1100 Priest Dr, Chandler, AZ 85226
  • Phoenix, AZ

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Resumes

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Abdelouahab Ziani

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Publications

Us Patents

Enhanced Formulation Of Cobalt Alloy Matrix Compositions

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US Patent:
7494617, Feb 24, 2009
Filed:
Sep 29, 2005
Appl. No.:
11/237938
Inventors:
Abdelouahab Ziani - Chandler AZ, US
Assignee:
Heraeus Inc. - Chandler AZ
International Classification:
C22C 32/00
US Classification:
419 19, 419 68, 20429813, 428846
Abstract:
A method for manufacturing a single-element matrix cobalt-based granular media alloy composition formulated as Co-(MO), M representing a base metal selected from the group consisting of magnesium (Mg), titanium (Ti), vanadium (V), chromium (Cr), manganese (Mn), iron (Fe), nickel (Ni), copper (Cu), zinc (Zn), aluminum (Al), silicon (Si), yttrium (Y), zirconium (Zr), niobium (Nb), molybdenum (Mo), ruthenium (Ru), indium (In), lanthanum (La), hafnium (Hf), tantalum (Ta), and tungsten (W), u and v representing the number of atoms of base metal M and oxygen (O) per oxide formula, respectively, and fand fbeing mole fractions represented by the equation f+(u+v)f=1. The method includes the steps of blending a Co-M master alloy powder and a CoO powder into a corresponding (CoM)-(CoO) formula, and densifying the blended powders.

Sodium Salt Containing Cig Targets, Methods Of Making And Methods Of Use Thereof

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US Patent:
7935558, May 3, 2011
Filed:
Oct 19, 2010
Appl. No.:
12/907595
Inventors:
Daniel R. Juliano - Santa Clara CA, US
Robert Tas - Aromas CA, US
Neil Mackie - Fremont CA, US
Abdelouahab Ziani - Santa Clara CA, US
Assignee:
MiaSole - Santa Clara CA
International Classification:
H01L 31/032
US Classification:
438 62, 257E31028, 20429813
Abstract:
A sputtering target includes at least one metal selected from copper, indium and gallium and a sodium containing compound.

Sodium Salt Containing Cig Targets, Methods Of Making And Methods Of Use Thereof

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US Patent:
8338214, Dec 25, 2012
Filed:
Mar 28, 2011
Appl. No.:
13/073159
Inventors:
Daniel R. Juliano - Santa Clara CA, US
Robert Tas - Aromas CA, US
Neil Mackie - Fremont CA, US
Abdelouahab Ziani - Santa Clara CA, US
Assignee:
MiaSole - Santa Clara CA
International Classification:
H01L 31/032
US Classification:
438 62, 20429813, 257E31028
Abstract:
A sputtering target includes at least one metal selected from copper, indium and gallium and a sodium containing compound.

Method Of Making A Cig Target By Die Casting

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US Patent:
8342229, Jan 1, 2013
Filed:
Oct 20, 2009
Appl. No.:
12/588579
Inventors:
Abdelouahab Ziani - Santa Clara CA, US
Daniel R. Juliano - Santa Clara CA, US
Assignee:
MiaSole - Santa Clara CA
International Classification:
B22D 17/08
B22D 19/04
US Classification:
164 98, 164113
Abstract:
A method of making a sputtering target includes providing a backing structure, and forming a die cast copper indium gallium sputtering target material on the backing structure.

Enhanced Sputter Target Alloy Compositions

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US Patent:
20050274221, Dec 15, 2005
Filed:
Jul 19, 2005
Appl. No.:
11/183968
Inventors:
Abdelouahab Ziani - Chandler AZ, US
Yuanda Cheng - Phoenix AZ, US
Bernd Kunkel - Phoenix AZ, US
Michael Bartholomeusz - Phoenix AZ, US
Assignee:
Heraeus, Inc. - Chandler AZ
International Classification:
C23C014/00
G11B005/65
US Classification:
075228000, 428826000
Abstract:
A sputter target, where the sputter target is comprised of cobalt (Co), greater than 0 and as much as 24 atomic percent chromium (Cr), greater than 0 and as much as 20 atomic percent platinum (Pt), greater than 0 and as much as 20 atomic percent boron (B), and greater than 0 and as much as 10 atomic percent gold (Au). The sputter target is further comprised of X, where Xis selected from the group consisting of tungsten (W), yttrium (Y), manganese (Mn), and molybdenum (Mo). The sputter target is further comprised of 0 to 7 atomic percent X, wherein Xis an element selected from the group consisting of titanium (Ti), vanadium (V), zirconium (Zr), niobium (Nb), ruthenium (Ru), rhodium (Rh), palladium (Pd), hafnium (Hf), tantalum (Ta), and iridium (Ir).

Enhanced Sputter Target Alloy Compositions

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US Patent:
20050277002, Dec 15, 2005
Filed:
Jun 15, 2004
Appl. No.:
10/866795
Inventors:
Abdelouahab Ziani - Chandler AZ, US
Yuanda Cheng - Phoenix AZ, US
Bernd Kunkel - Phoenix AZ, US
Michael Bartholomeusz - Phoenix AZ, US
International Classification:
C23C014/32
G11B005/706
US Classification:
428846000, 204298120, 204298130, 204192200
Abstract:
A sputter target, where the sputter target is comprised of Co, greater than 0 and as much as 24 atomic percent Cr, greater than 0 and as much as 20 atomic percent Pt, greater than 0 and as much as 20 atomic percent B, and greater than 0 and as much as 10 atomic percent X, where Xis an element selected from the group consisting of Ag, Ce, Cu, Dy, Er, Eu, Gd, Ho, In, La, Lu, Mo, Nd, Pr, Sm, Tl, W, and Yb. The sputter target is further comprised of X, wherein Xis selected from the group consisting of W, Y, Mn, and Mo. Moreover, the sputter target is further comprised of 0 to 7 atomic percent X, wherein Xis an element selected from the group consisting of Ti, V, Zr, Nb, Ru, Rh, Pd, Hf, Ta, and Ir. The thin film sputtered by the sputter target has a coercivity value between 1000 Oersted and 4000 Oersted.

Low Oxygen Content Alloy Compositions

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US Patent:
20060078457, Apr 13, 2006
Filed:
Oct 12, 2004
Appl. No.:
10/961215
Inventors:
Abdelouahab Ziani - Chandler AZ, US
Jon Apprill - Tempe AZ, US
David Furgason - Gilbert AZ, US
Assignee:
Heraeus, Inc. - Chandler AZ
International Classification:
C22C 5/04
C22C 18/00
C22C 28/00
C22C 22/00
C22C 38/00
C22C 19/03
C22C 19/07
US Classification:
420082000, 420459000, 420513000, 420555000, 420434000, 420466000, 420435000, 420463000
Abstract:
Alloy compositions include Mn alloys that combine Mn with one element selected from Ga, In, Ni and Zn. Also included are Fe alloys and Co alloys in which Fe or Co are combined with either Pt or Pd. The alloy compositions form ordered compounds having L1or L1type crystalline structures within specified compositional ranges. In addition, the alloy compositions have low levels of impurities, such as oxygen and sulfur, which provide better performance in magnetic memory applications. The alloy compositions preferably are formed into sputtering targets used for thin film applications.

Carbon Containing Sputter Target Alloy Compositions

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US Patent:
20060110626, May 25, 2006
Filed:
Nov 24, 2004
Appl. No.:
10/995112
Inventors:
Abdelouahab Ziani - Chandler AZ, US
Michael Lathrop - Phoenix AZ, US
Francois Dary - PhoenIx AZ, US
Assignee:
Heraeus, Inc. - Chandler AZ
International Classification:
G11B 5/66
C23C 14/00
US Classification:
428832200, 204298130
Abstract:
The invention provides a sputter target material. The sputter target material comprises an alloy system comprising Cr—C, Cr—M—C or Cr—M—M—C, wherein C comprises at least 0.5 and as much as 20 atomic percent; M comprises at least 0.5 and as much as 20 atomic percent and is an element selected from the group consisting of Ti, V, Y, Zr, Nb, Mo, Hf, Ta, and W; Mcomprises at least 0.5 and as much as 20 atomic percent and is an element selected from the group consisting of Ti, V, Zr, Nb, Mo, Hf, Ta, and W, and Mcomprises at least 0.5 and as much as 10 atomic percent and is an element selected from the group consisting of Li, Mg, Al, Sc, Mn, Y, and Te. A magnetic recording medium comprising a substrate and at least an underlayer comprising the sputter target material of the invention also is provided. A method of manufacturing a sputter target material further provided. The method can employ powder materials comprising a combination of elements can include a chromium alloy, a carbide or carbon containing master alloy.
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