US Patent:
20050277002, Dec 15, 2005
Inventors:
Abdelouahab Ziani - Chandler AZ, US
Yuanda Cheng - Phoenix AZ, US
Bernd Kunkel - Phoenix AZ, US
Michael Bartholomeusz - Phoenix AZ, US
International Classification:
C23C014/32
G11B005/706
US Classification:
428846000, 204298120, 204298130, 204192200
Abstract:
A sputter target, where the sputter target is comprised of Co, greater than 0 and as much as 24 atomic percent Cr, greater than 0 and as much as 20 atomic percent Pt, greater than 0 and as much as 20 atomic percent B, and greater than 0 and as much as 10 atomic percent X, where Xis an element selected from the group consisting of Ag, Ce, Cu, Dy, Er, Eu, Gd, Ho, In, La, Lu, Mo, Nd, Pr, Sm, Tl, W, and Yb. The sputter target is further comprised of X, wherein Xis selected from the group consisting of W, Y, Mn, and Mo. Moreover, the sputter target is further comprised of 0 to 7 atomic percent X, wherein Xis an element selected from the group consisting of Ti, V, Zr, Nb, Ru, Rh, Pd, Hf, Ta, and Ir. The thin film sputtered by the sputter target has a coercivity value between 1000 Oersted and 4000 Oersted.