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Ying Zhang

from Flushing, NY
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Related to:
Bi Y ZhangJian W Zhong, 54Li Zhang, 49Kai Zhang, 52Yaocheng ZhangTing Zhang, 34Xiaodan Zhang, 54Chengda Zhang, 42Yufang Zhang, 74
Connected to:
Aaron N Zhang, 60Adelaide X Zhang, 48Aiai Zhang, 38Aijun Zhang, 70Airong Zhang, 72Alfred Zhang, 31Anderson Zhang, 34Angeline Zhang, 36Anli Zhang, 68Anming Zhang, 64

Ying Zhang Phones & Addresses

  • Flushing, NY

Professional Records

License Records

Ying Zhang

Address:
Flushing, NY 11354
License #:
7501009409 - Active
Category:
Massage Therapist
Issued Date:
Apr 25, 2016
Expiration Date:
Oct 31, 2017
Type:
Massage Therapist

Ying Zhang

License #:
49921 - Expired
Category:
Professional
Issued Date:
Jun 29, 2009

Ying Zhang

License #:
LP00822 - Expired
Category:
Physician
Issued Date:
Sep 6, 2006
Expiration Date:
Jun 30, 2010
Type:
Limited Physician

Ying Zhang

License #:
CLP00822 - Expired
Category:
Physician
Issued Date:
Sep 6, 2006
Expiration Date:
Jun 30, 2010
Type:
CSR-Limited Physician

Lawyers & Attorneys

Ying Zhang Photo 1

Ying Zhang - Lawyer

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Address:
Jun He Law Offices
(108) 519-1300 (Office)
Licenses:
New York - Currently registered 2012
Education:
Columbia Law School
Ying Zhang Photo 2

Ying Zhang - Lawyer

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Licenses:
Massachusetts - Active 2005
Ying Zhang Photo 3

Ying Zhang, Brooklyn NY - Lawyer

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Address:
Smotritsky & Spektor, PLLC
1928 Kings Hwy Fl 3, Brooklyn, NY 11229
(718) 554-3630 (Office)
Licenses:
New York - Currently registered 2010
Education:
University of Illinois At Urbana-Champaign
Ying Zhang Photo 4

Ying Zhang - Lawyer

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Address:
Fangda Partners
(397) 688-88xx (Office)
Licenses:
New York - Currently registered 2007
Education:
Boston University School of Law
Ying Zhang Photo 5

Ying Zhang - Lawyer

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Address:
Hogan Lovells (Beijing Office)
(106) 582-9540 (Office)
Licenses:
New York - Currently registered 2008
Education:
The University of Texas At Austin
Ying Zhang Photo 6

Ying Zhang - Lawyer

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Licenses:
California - Active 2001
Education:
University of San Diego School of Law
Ying Zhang Photo 7

Ying Zhang, New York NY - Lawyer

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Address:
TROUTMAN SANDERS ATTORNEYS AT LAW
405 Lexington Avenue, New York, NY 10174
Licenses:
New York - Currently registered 2002
Education:
Guangdong University
Degree - LL.B - Bachelor of Laws
Specialties:
International Law - 50%
Antitrust / Trade Law - 50%
Ying Zhang Photo 8

Ying Zhang - Lawyer

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Specialties:
General Practice
Corporate Securities
ISLN:
917352476
Admitted:
2001
Law School:
Beijing Union University - Beijing, PR China, LL.B., 1992; University of San Diego, LL.M., 2000

Medicine Doctors

Ying Zhang Photo 9

Ying Zhang

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Specialties:
Psychiatry
Work:
Kaiser Permanente Medical Group
3553 Whipple Rd BLDG B, Union City, CA 94587
(510) 454-1000 (phone), (510) 675-2153 (fax)

Downtown Mental Health
1075 E Santa Clara St FL 1, San Jose, CA 95116
(408) 792-2100 (phone), (408) 298-0192 (fax)
Education:
Medical School
Sun Yat Sen Univ of Med Sci, Guangzhou, China (242 21 Pr 1/71)
Graduated: 1988
Procedures:
Vaccine Administration
Conditions:
Acute Upper Respiratory Tract Infections
Alopecia Areata
Bronchial Asthma
Depressive Disorders
Skin and Subcutaneous Infections
Languages:
English
Spanish
Tagalog
Description:
Dr. Zhang graduated from the Sun Yat Sen Univ of Med Sci, Guangzhou, China (242 21 Pr 1/71) in 1988. She works in San Jose, CA and 1 other location and specializes in Psychiatry. Dr. Zhang is affiliated with Kaiser Permanente Medical Center - Roseville and Santa Clara Valley Medical Center.
Ying Zhang Photo 10

Ying Zhang, East Elmhurst NY - RN (Registered Nurse)

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Specialties:
Nursing (Registered Nurse)
Address:
3265 93Rd St, East Elmhurst, NY 11369
(718) 899-7487 (Phone)
Languages:
English
Ying Zhang Photo 11

Ying M. Zhang

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Specialties:
Psychiatry
Work:
Pathway Center For Psychotherapy
4530 S Berkeley Lk Rd STE B, Norcross, GA 30071
(770) 446-5642 (phone), (770) 446-5643 (fax)
Education:
Medical School
Tianjin Med Univ, Tianjin City, Tianjin, China
Graduated: 1991
Conditions:
Anxiety Dissociative and Somatoform Disorders
Anxiety Phobic Disorders
Attention Deficit Disorder (ADD)
Bipolar Disorder
Depressive Disorders
Languages:
English
Spanish
Description:
Dr. Zhang graduated from the Tianjin Med Univ, Tianjin City, Tianjin, China in 1991. She works in Norcross, GA and specializes in Psychiatry. Dr. Zhang is affiliated with Dekalb Medical At North Decatur.
Ying Zhang Photo 12

Ying Tao Zhang

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Specialties:
Family Medicine
Psychiatry
Sleep Medicine
Education:
Shandong Medical University (1982)
Ying Zhang Photo 13

Ying Ming Zhang

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Specialties:
Psychiatry
Education:
Tianjin Medical University (1991)
Ying Zhang Photo 14

Ying Zhang

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Specialties:
Anesthesiology
Anatomic Pathology & Clinical Pathology
Education:
Tongji Medical University (1996)

Resumes

Resumes

Ying Zhang Photo 15

Ying Zhang

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Work:
Energy Efficient Building(EEB) HUB

Mar 2012 to 2000
Research Assistant
Brilliance Automotive Ltd.
Shenyang, China
Jul 2011 to Aug 2011
SAP Operations Intern
Dalian JiaYing Investment and Guarantee Group
Dalian, CN
Jul 2010 to Aug 2010
Subcontractor Guarantee Intern
KOMPA Slovensko, Slovakia

Feb 2010 to Apr 2010
Volunteer Special Teacher
Dalian Wanda Group
Shenyang, CN
Jul 2009 to Aug 2009
Engineering Dept. Director Assistant Intern
AIESEC Dalian Committee
Dalian, CN
Mar 2008 to Oct 2008
Teamleader of OutGoing Exchange
Education:
The Pennsylvania State University
M.S. in Industrial Engineering and Operations Research
Ying Zhang Photo 16

Ying Zhang Brooklyn, NY

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Work:
Individual

Feb 2010 to May 2010
Network & System Administration
Lab Testing for Network Security

Jan 2010 to May 2010
Individual

Sep 2009 to Jan 2010
Web Platform Development for Weblog
IP Routing Lookup

Mar 2009 to May 2009
Team lead
Labs for TCP

Sep 2008 to Dec 2008
Education:
Polytechnic Institute of New York University
Brooklyn, NY
Sep 2008 to May 2010
M.S. in Electrical Engineering
Xi'dian University
Sep 2003 to Jun 2007
B.S. in Telecommunication Engineering
Skills:
Languages: C, PHP, HTML, SQL, Windows PowerShell, VBScript, MATLAB Software: MS Office, Visio, MySQL, MS Visual Studio 2005/2008/2010, Turbo C 2.0, Anti-virus, VMware Workstation, Apache, Tcpdump, Iptables, OpenVAS, Wireshark, Ethereal Systems: Windows Server 2008, Windows Server 2008 R2, Windows 7/Vista/XP, LINUX (RedHat) Network: TCP/IP, RIP, EIGRP, OSPF, BGP, LAN, VLAN, VTP, STP, SNMP, SMTP, PPP, CIDR, VLSM, DHCP, DNS, IPSec, VPN, SSL, RTSP, Frame Relay, MPLS, ATM, etc. Hardware: Cisco Routers, Switches
Ying Zhang Photo 17

Ying Zhang Brooklyn, NY

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Work:
Metropolitan Council on Jewish Poverty

2013 to 2000
Medicaid Recertification Coordinator
Metropolitan Council on Jewish Poverty

May 2013 to Aug 2013
Facilitated Benefit Enroller
Charles B Wang Community Health Center

2012 to 2012
Patient Services Representative
Goodland Medical P.C

2010 to 2012
Receptionist
Plymptoons

2010 to 2011
Production Intern
Education:
School of Visual Arts
New York, NY
2007 to 2011
Bachelor of Fine Arts in Animation
Skills:
Proficient with PC, MAC, Microsoft Office, Access, powerpoint, google drive, internet research, customer care,data input/organization, case management, and document preparation. Experience in Photoshop, After Effect. Fluent in Cantonese,Mandarin, and English.
Ying Zhang Photo 18

Ying Zhang Millburn, NJ

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Work:
Molecular Innovative Therapeutics

2003 to 2000
Research Scientist II
Novartis Pharmaceuticals Corporation
East Hanover, NJ
2001 to 2003
Scientist I
National Cold Spring Harbor Laboratory
Cold Spring Harbor, NY
1996 to 2001
Labtech III
Boston Biomedical Research Institute
Boston, MA
1995 to 1996
Research Assistant
Education:
Chinese Academy of Sciences
Shanghai, P.R., US
MS in Molecular Biology
East China University of Science and Technology
Shanghai, P.R., US
BS in Biochemistry
Skills:
Molecular Biology: DNA/RNA isolation vector construction/modification PCR/RT-PCR DNA cloning (traditional T4 DNA Ligase, TOPO technology, Gateway System, Infusion technology) site-direct mutagenesis gene knockout Southern Blot DNA sequencing Cellular Biology: E. Coli, Pichia, insect and mammalian cell culture and manipulations Protein Biochemistry: Recombinant protein expression and purification with various affinity fusions/tags AKTA chromatography system western blot ELISA Protein Crystallography: Protein crystallization: design, screening, optimization, micro seeding, soaking diffraction data collection on Raxis IV++ and Mar345 image plate detectors Automation: Tecan liquid handling system 96+1 Innovadyne ScreenMaker 96+8 Formulatrix Rock Imaging system

Business Records

Name / Title
Company / Classification
Phones & Addresses
Ying Zhang
Associate-investment Management
Skadden, Arps, Slate, Meagher & Flom Llp
Legal Services
4 Times Sq Fl 24, New York, NY 10036
Ying Zhang
Associate-investment Management
Skadden, Arps, Slate, Meagher & Flom Llp
Legal Services
4 Times Sq Fl 24, New York, NY 10036
Ying Zhang
Manager
GOLDLINK INTERNATIONAL, INC
Whol Electrical Equip Mfg Elec Components Whol Scrap/Waste Mat
561 10 Ave APT 34F, New York, NY 10036
34F561 10 Ave, New York, NY 10036
Ying Zhang
Executive Assistant
Five Star Chinese Takeout Restaurant
Eating Place
456 Sheridan Blvd, Far Rockaway, NY 11096
Ying Zhang
Medical Specialist
CLIFFORD CHANCE US LLP
Legal Services Office · Legal Services · Attorneys
James W Paul Esq 31 West 52, New York, NY 10019
31 W 52, New York, NY 10019
(212) 878-8000, (212) 885-0570
Ying Zhang
SILK ROAD CONSULTANCY LLC
Ying Zhang
BHB INTERNATIONAL, INC
35-15 84 St #2H, Jackson Heights, NY 11372
35-18 84 St #2H, Jackson Heights, NY 11372
Ying Zhang
UTICA SPIRITS, INC
Liquor Stores
1626 Utica Ave, Brooklyn, NY 11234
85-25 60 Dr, Middle Village, NY 11379
(718) 338-8367
Ying Zhang
Attorney
Troutman Sanders Llp
Legal Services Office · Offices of Lawyers
405 Lexington Ave, New York, NY 10174
135 E 42 St, New York, NY 10174
(212) 704-6000

Publications

Us Patents

Fabrication Of Notched Gates By Passivating Partially Etched Gate Sidewalls And Then Using An Isotropic Etch

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US Patent:
6528363, Mar 4, 2003
Filed:
Mar 19, 2001
Appl. No.:
09/811707
Inventors:
Victor Ku - Tarrytown NY
Maheswaran Surendra - Croton-on-Hudson NY
Len Tsou - New City NY
Ying Zhang - Yorktown Heights NY
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 21336
US Classification:
438197, 438301, 438303, 438585, 438595
Abstract:
A method of forming a notched gate structure having substantially vertical sidewalls and a sub-0. 05 m electrical critical dimension is provided. The method includes forming a conductive layer on an insulating layer; forming a mask on the conductive layer so as to at least protect a portion of the conductive layer; anisotropically etching the conductive layer not protected by the mask so as to thin the conductive layer to a predetermined thickness and to form a conductive feature underlying the mask, the conductive feature having substantially vertical sidewalls; forming a passivating layer at least on the substantially vertical sidewalls; and isotropically etching remaining conductive layer not protected by the mask to remove the predetermined thickness thereby exposing a lower portion of said conductive feature not containing the passivating layer, while simultaneously removing notched regions in the lower portion of the conductive feature.

Self-Aligned Silicide Process For Silicon Sidewall Source And Drain Contacts

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US Patent:
6645861, Nov 11, 2003
Filed:
Apr 18, 2001
Appl. No.:
09/836197
Inventors:
Cyril Cabral, Jr. - Ossining NY
Kevin K. Chan - Staten Island NY
Guy Moshe Cohen - Mohegan Lake NY
Kathryn Wilder Guarini - Yorktown Heights NY
Christian Lavoie - Ossining NY
Paul Michael Solomon - Yorktown Heights NY
Ying Zhang - Yorktown Heights NY
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 2144
US Classification:
438682, 438595, 438596, 438655, 438656, 438664, 438683
Abstract:
A method (and structure formed thereby) of forming a metal silicide contact on a non-planar silicon containing region having controlled consumption of the silicon containing region, includes forming a blanket metal layer over the silicon containing region, forming a silicon layer over the metal layer, etching anisotropically and selectively with respect to the metal the silicon layer, reacting the metal with silicon at a first temperature to form a metal silicon alloy, etching unreacted portions of the metal layer, annealing at a second temperature to form an alloy of metal-Si , and selectively etching the unreacted silicon layer.

Lateral-Only Photoresist Trimming For Sub-80 Nm Gate Stack

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US Patent:
6869899, Mar 22, 2005
Filed:
Jul 12, 2001
Appl. No.:
09/902727
Inventors:
Arpan P. Mahorowala - Bronxville NY, US
Maheswaran Surendra - Croton-on-Hudson NY, US
Jung H. Yoon - Poughkeepsie NY, US
Ying Zhang - Yorktown Heights NY, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L021/00
US Classification:
438950, 438949, 438947, 438945
Abstract:
The invention relates generally to lithographic patterning of very small features. In particular, the invention relates generally to patterning of semiconductor circuit features smaller than lithographically defined using either conventional optical lithography or next generation lithography techniques. The invention relates more particularly, but not by way of limitation, to lateral trimming of photoresist images.

Selective Silicon-On-Insulator Isolation Structure And Method

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US Patent:
6936522, Aug 30, 2005
Filed:
Jun 26, 2003
Appl. No.:
10/604102
Inventors:
An L. Steegen - Stamford CT, US
Maheswaran Surendra - Croton on Hudson NY, US
Ying Zhang - Yorktown Heights NY, US
Franz Zach - Wappingers Falls NY, US
Robert Wong - Poughkeepsie NY, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L021/76
US Classification:
438426, 438296, 438424, 438435
Abstract:
A first aspect of the present invention is a method of forming an isolation structure including: (a) providing a semiconductor substrate; (b) forming a buried N-doped region in the substrate; (c) forming a vertical trench in the substrate, the trench extending into the N-doped region; (d) removing the N-doped region to form a lateral trench communicating with and extending perpendicular to the vertical trench; and (e) at least partially filling the lateral trench and filling the vertical trench with one or more insulating materials.

Method And Structure For Forming Strained Si For Cmos Devices

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US Patent:
7129126, Oct 31, 2006
Filed:
Nov 5, 2003
Appl. No.:
10/605906
Inventors:
An L. Steegen - Stamford CT, US
Haining S. Yang - Wappingers Falls NY, US
Ying Zhang - Yorktown Heights NY, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 21/8238
US Classification:
438199, 438221, 438739
Abstract:
A method for manufacturing a device including an n-type device and a p-type device. In an aspect of the invention, the method involves doping a portion of a semiconductor substrate and forming a gap in the semiconductor substrate by removing at least a portion of the doped portion of the semiconductor substrate. The method further involves growing a strain layer in at least a portion of the gap in the semiconductor substrate. For the n-type device, the strain layer is grown on at least a portion which is substantially directly under a channel of the n-type device. For the p-type device, the strain layer is grown on at least a portion which is substantially directly under a source region or drain region of the p-type device and not substantially under a channel of the p-type device.

Selective Silicon-On-Insulator Isolation Structure And Method

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US Patent:
7326983, Feb 5, 2008
Filed:
Mar 17, 2005
Appl. No.:
11/082993
Inventors:
An L. Steegen - Stamford CT, US
Maheswaran Surendra - Croton-on-Hudson NY, US
Ying Zhang - Yorktown Heights NY, US
Franz Zach - Wappingers Falls NY, US
Robert Wong - Poughkeepsie NY, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 27/108
US Classification:
257296, 257506, 257510, 257513, 257371
Abstract:
A first aspect of the present invention is a method of forming an isolation structure including: (a) providing a semiconductor substrate; (b) forming a buried N-doped region in the substrate; (c) forming a vertical trench in the substrate, the trench extending into the N-doped region; (d) removing the N-doped region to form a lateral trench communicating with and extending perpendicular to the vertical trench; and (e) at least partially filling the lateral trench and filling the vertical trench with one or more insulating materials.

Method And Structure For Forming Strained Si For Cmos Devices

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US Patent:
7429752, Sep 30, 2008
Filed:
Sep 22, 2006
Appl. No.:
11/534526
Inventors:
An L Steegen - Stamford CT, US
Haining S. Yang - Wappingers Falls NY, US
Ying Zhang - Yorktown Heights NY, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 29/772
US Classification:
257 65, 257288, 257622, 257E29084
Abstract:
A semiconductor device includes a semiconductor substrate having at least one gap, extending under a portion of the semiconductor substrate. A gate stack is on the semiconductor substrate. A strain layer is formed in at least a portion of the at least one gap. The strain layer is formed only under at least one of a source region and a drain region of the semiconductor device.

Trilayer Resist Scheme For Gate Etching Applications

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US Patent:
7435671, Oct 14, 2008
Filed:
Aug 18, 2006
Appl. No.:
11/506227
Inventors:
Nicholas C. Fuller - Ossining NY, US
Timothy J. Dalton - Ridgefield CT, US
Ying Zhang - Yorktown Heights NY, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 21/3205
US Classification:
438591, 438163, 438585
Abstract:
A trilayer resist (TLR) patterning scheme is provided to enable gate conductors, particularly polySi gate conductors, with critical dimensions (CDs) of less than 40 nm and minimal LER and LWR. In accordance with the present invention, the inventive patterning scheme utilizes an organic/inorganic/organic multilayer stack instead of an organic layer used in the prior art. The top organic layer of the inventive TLR is a photoresist material such as a 193 nm photoresist that is located atop an antireflective coating (ARC), which is also comprised of an organic material. The middle inorganic layer of the TLR comprises any oxide layer such as, for example, a low temperature (less than or equal to 250 C. ) chemical vapor deposited (CVD) oxide, an oxide derived from TEOS (tetraethylorthosilicate), silicon oxide, a silane oxide, or a Si-containing ARC material. The bottom organic layer of the TLR comprises any organic layer such as, for example, a Near Frictionless Carbon (NFC), a diamond-like carbon, a thermosetting polyarylene ether.

Isbn (Books And Publications)

Xizang Feng Guang: Scenery in Tibet

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Author

Ying Zhang

ISBN #

7503215992

Amazon

Everyday Chinese in Conversation: A Practical Guide of Real Spoken Chinese Idiomatic Phrases: 实用汉语口语宝典之常见习惯用语 (Everyday Chinese in Conversation: A Practical Guide of Real Spoken Chinese)

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Spoken Chinese is not the same as textbook Chinese. This is a fact few L2 Chinese learners are aware of. The Chinese learned from textbook is not what is used and heard in daily conversations. This practical guide to real Spoken Chinese is intended for learners who have had the very basic understand...
Author

YING ZHANG

Binding

Kindle Edition

Pages

28

Publisher

Enchanted

ISBN #

9

Everyday Chinese in Conversation: A Practical Guide of Real Spoken Chinese Topic-based Vocabualry : 实用汉语 口语宝典 之 常用分类词汇

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Spoken Chinese is not the same as textbook Chinese. This is a fact few L2 Chinese learners are aware of. The Chinese learned from textbook is not what is often used and heard in daily conversations. This practical guide to real Spoken Chinese is intended for learners who have had the very basic unde...
Author

Ying Zhang

Binding

Kindle Edition

Pages

88

Publisher

Enchanted

ISBN #

8

Tales and Traditions Volume 4 (Readings in Chinese Literature) (Chinese Edition)

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This fourth and final volume in the Tales and Traditions graded-reader series contains excerpts from five classical Chinese works of literature for advanced-level learners. Each chapter includes an introduction the story, the excerpt in simplified and traditional characters on facing pages, and disc...
Author

Yun Xiao, Hui Xiao, Jijun Yu, Ying Zhang

Binding

Paperback

Pages

260

Publisher

Cheng & Tsui

ISBN #

0887276814

EAN Code

9780887276811

ISBN #

7

Tales & Traditions: Readings in Chinese Literature Series (Volume 3) (Chinese Edition)

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Just as children gain literacy in their native language by reading, learners of a foreign language must read large amounts of level-appropriate books and material to attain fluency in their target language. The Readings in Chinese Literature Series was specially created to help learners of Chinese ...
Author

Yun Xiao, Ying Zhang, Chunching Chang

Binding

Paperback

Pages

264

Publisher

Cheng & Tsui

ISBN #

0887276822

EAN Code

9780887276828

ISBN #

6

Tian Yingzhangs Running Scripts of 7000 Characters (Chinese Edition)

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Tian Yingzhang's Running Scripts of 7000 Characters selects the most frequently used 7000 Chinese characters, arranged by the strokes. For the learners' convenience, it adds pinyin on every character. To help learners in the shortest time, it has calligraphy knowledge about strokes of Chinese charac...
Author

Tian Ying Zhang

Binding

Paperback

Pages

68

Publisher

Peoples Fine Arts Publishing House

ISBN #

7102050194

EAN Code

9787102050195

ISBN #

3

Hard-tipped Regular Scripts by Tian Ying-zhang (with CD) (Chinese Edition)

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This book was written by Tian Ying-Zhang, a modern hard-tipped calligrapher in China. He introduces the basic knowledge, character structures and some useful writing skills of hard-tipped regular characters. Some famous works are selected for readers appreciation. Blank paper are also provided for p...
Author

tian ying zhang

Binding

Paperback

Pages

76

Publisher

Shanghai Jiao Tong University Press

ISBN #

7313072724

EAN Code

9787313072726

ISBN #

2

Hard-tipped Running Scripts by Tian Ying-zhang (with CD) (Chinese Edition)

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Hard-tipped calligraphy refers to calligraphic works written by hard-tipped instruments, such as pens, pencils and sign pens. They are quite different from those by brushes. Some standards are also illustrated in this book. This book was written by Tian Ying-Zhang, a modern hard-tipped calligrapher ...
Author

tian ying zhang

Binding

Paperback

Pages

76

Publisher

Shanghai Jiao Tong University Press

ISBN #

7313072732

EAN Code

9787313072733

ISBN #

1

Tian Yingzhang Basic Training to Introduction of Running Script (Chinese Edition)

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Author

Tian Ying Zhang

Binding

Paperback

Pages

46

Publisher

Shanghai Jiao Tong University Press

ISBN #

7313079443

EAN Code

9787313079442

ISBN #

10

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Ying Zhang from Flushing, NY Get Report