Nitin Kumar

7678607, Mar 16, 2010

Feb 5, 2007

11/702725

Tony Chiang - Campbell CA, US
Chi-I Lang - Sunnyvale CA, US
Jinhong Tong - Santa Clara CA, US
Nitin Kumar - Menlo Park CA, US

Intermolecular, Inc. - San Jose CA

H01L 21/00

438104, 438171, 438678, 257 4, 365148

Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.

7680117, Mar 16, 2010

Mar 30, 2007

11/694738

Nitin Kumar - Fremont CA, US
Fritz Budiyanto - Sunnyvale CA, US

Juniper Networks, Inc. - Sunnyvale CA

H04L 12/28
H04L 12/56

370392

A method may include receiving a packet associated with a flow of packets, the packet including a destination address; selecting one of a plurality of memory banks, the selected memory bank being associated with the flow of packets, wherein each of the plurality of memory banks stores the same next-hop information for forwarding the packet to the destination address; accessing, in the selected memory bank, the next-hop information for forwarding the packet to the destination address; and forwarding the packet to the destination address based on the next-hop information.

7704789, Apr 27, 2010

Feb 5, 2007

11/702967

Nitin Kumar - Menlo Park CA, US
Jinhong Tong - Santa Clara CA, US
Chi-I Lang - Sunnyvale CA, US
Tony Chiang - Campbell CA, US

Intermolecular, Inc. - San Jose CA

H01L 21/00

438104, 438171, 438678, 257 4

Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.

7785172, Aug 31, 2010

Aug 14, 2007

11/838653

Peter Satitpunwaycha - Sunnyvale CA, US
Richard Endo - San Carlos CA, US
Zachary Fresco - Santa Clara CA, US
Nitin Kumar - Menlo Park CA, US

Intermolecular, Inc. - San Jose CA

B24B 49/00
B24B 1/00

451 8, 451 51, 451287, 451291

Combinatorial processing including rotation and movement within a region is described, including defining multiple regions of at least one substrate, processing the multiple regions of the at least one substrate in a combinatorial manner, rotating a head in one of the multiple regions to perform the processing, and repositioning the head relative to the one of the multiple regions while rotating the head during the processing.

7879710, Feb 1, 2011

Dec 29, 2006

11/647882

Zachary Fresco - San Jose CA, US
Chi-I Lang - San Jose CA, US
Sandra G. Malhotra - San Jose CA, US
Tony P. Chiang - San Jose CA, US
Thomas R. Boussie - Menlo Park CA, US
Nitin Kumar - San Jose CA, US
Jinhong Tong - San Jose CA, US
Anh Duong - San Jose CA, US

Intermolecular, Inc. - San Jose CA

H01L 21/44

438597, 438622, 438624, 438761, 438763, 257E2126, 257E21265

Methods for substrate processing are described. The methods include forming a material layer on a substrate. The methods include selecting constituents of a molecular masking layer (MML) to remove an effect of variations in the material layer as a result of substrate processing. The methods include normalizing the surface characteristics of the material layer by selectively depositing the MML on the material layer.

7960313, Jun 14, 2011

Jun 14, 2007

11/763180

Zachary Fresco - Santa Clara CA, US
Nitin Kumar - Menlo Park CA, US

Intermolecular, Inc. - San Jose CA

C40B 60/14
C40B 60/00
B01L 3/00
B01L 99/00

506 40, 506 33, 422500

Combinatorial processing including stirring is described, including defining multiple regions of a substrate, processing the multiple regions of the substrate in a combinatorial manner, introducing a fluid into a first aperture at a first end of a body to dispense the fluid out of a second aperture at a second end of the body and into one of the multiple regions, and agitating the fluid using an impeller at a second end of the body to facilitate interaction of the fluid with a surface of the substrate.

7972897, Jul 5, 2011

Feb 5, 2007

11/702966

Nitin Kumar - Menlo Park CA, US
Chi-I Lang - Sunnyvale CA, US
Tony Chiang - Campbell CA, US
Jinhong Tong - Santa Clara CA, US

Intermolecular, Inc. - San Jose CA

H01L 21/00

438104, 438171, 438678

Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.

8014317, Sep 6, 2011

Aug 21, 2008

12/195686

Kaushik Ghosh - Sunnyvale CA, US
Kireeti Kompella - Los Altos CA, US
Siva Gaggara - Sunnyvale CA, US
Nitin Kumar - Fremont CA, US
Steven Lin - Cupertino CA, US

Juniper Networks, Inc. - Sunnyvale CA

H04L 12/28
H04L 12/56
G06F 15/173

370254, 370392, 37039531, 709242

A route for a data unit through a network may be defined based on a number of next hops. Exemplary embodiments described herein may implement a router forwarding table as a chained list of references to next hops. In one implementation, a device includes a forwarding table that includes: a first table configured to store, for each of a plurality of routes for data units in a network, a chain of links to next hops for the routes; and a second table configured to store the next hops. The device also includes a forwarding engine configured to assemble the next hops for the data units based on using the chain of links in the first table to retrieve the next hops in the second table and to forward the data units in the network based on the assembled next hops.