Inventors:
Santosh Yachareni - San Jose CA, US
Subodh Kumar - San Jose CA, US
Hsiao Chen - Campbell CA, US
Assignee:
Xilinx, Inc. - San Jose CA
International Classification:
G11C 7/10
G11C 8/00
Abstract:
A data value is read from one port of a dual-port memory cell during a clock cycle. A WRITE assist pulse having a delay from an end-of-read signal is generated. The delay and duration of the WRITE assist pulse are optionally user-selectable. A high voltage (e. g. , Vdd) is coupled to the bitlines (e. g. , BL-A, BLc-A) of the first port during the WRITE assist pulse, and a low voltage value (e. g. , zero) is written to the memory cell through the second port (e. g. , BL-B, BLc-B) during the clock cycle.