Deven M Mittal

20220367205, Nov 17, 2022

May 12, 2021

17/318843

- Santa Clara CA, US
Martin Seamons - San Jose CA, US
Shan Tang - Middleton MA, US
Qi Gao - Wilmington MA, US
Deven Raj Mittal - Middleton MA, US
Kyuha Shim - Andover MA, US

Applied Materials, Inc. - Santa Clara CA

H01L 21/3115
H01L 21/02

A method may include providing a substrate having, on a first surface of the substrate, a low dielectric constant layer characterized by a layer thickness. The method may include heating the substrate to a substrate temperature in a range of 200 C. to 550 C.; and directing an ion implant treatment to the low dielectric constant layer, while the substrate temperature is in the range of 200 C. to 550 C. As such, the ion implant treatment may include implanting a low weight ion species, at an ion energy generating an implant depth equal to 40% to 175% of the layer thickness.

20210384041, Dec 9, 2021

Aug 19, 2021

17/406183

- Santa Clara CA, US
Timothy J. Miller - Ipswich MA, US
Jun Seok Lee - Andover MA, US
Il-Woong Koo - Andover MA, US
Deven Raj Mittal - Middleton MA, US

H01L 21/322
H01L 21/263

A method of processing and passivating an implanted workpiece is disclosed, wherein, after passivation, the fugitive emissions of the workpiece are reduced to acceptably low levels. This may be especially beneficial when phosphorus, arsine, germane or another toxic species is the dopant being implanted into the workpiece. In one embodiment, a sputtering process is performed after the implantation process. This sputtering process is used to sputter the dopant at the surface of the workpiece, effectively lowering the dopant concentration at the top surface of the workpiece. In another embodiment, a chemical etching process is performed to lower the dopant concentration at the top surface. After this sputtering or chemical etching process, a traditional passivation process can be performed.

20200373170, Nov 26, 2020

May 21, 2019

16/417853

- Santa Clara CA, US
Timothy J. Miller - Ipswich MA, US
Jun Seok Lee - Andover MA, US
Il-Woong Koo - Andover MA, US
Deven Raj Mittal - Middleton MA, US

H01L 21/322

A method of processing and passivating an implanted workpiece is disclosed, wherein, after passivation, the fugitive emissions of the workpiece are reduced to acceptably low levels. This may be especially beneficial when phosphorus, arsine, germane or another toxic species is the dopant being implanted into the workpiece. In one embodiment, a sputtering process is performed after the implantation process. This sputtering process is used to sputter the dopant at the surface of the workpiece, effectively lowering the dopant concentration at the top surface of the workpiece. In another embodiment, a chemical etching process is performed to lower the dopant concentration at the top surface. After this sputtering or chemical etching process, a traditional passivation process can be performed.

20190326116, Oct 24, 2019

Jul 9, 2018

16/030311

- Gloucester MA, US
Tzu-Yu Liu - Somerville MA, US
Edwin Arevalo - Gloucester MA, US
Deven Mittal - Gloucester MA, US
Somchintana Norasetthekul - Gloucester MA, US
Kyuha Shim - Andover MA, US
Lauren Liaw - Gloucester MA, US
Takaski Shimizu - Gloucester MA, US
Nobuyuki Sasaki - Cupertino CA, US
Ryuichi Muira - Gloucester MA, US
Hiro Ito - Gloucester MA, US

Varian Semiconductor Equipment Associates, Inc. - Gloucester MA

H01L 21/033
H01L 21/02

A method may include depositing a mask layer on a substrate using physical vapor deposition, wherein an absolute value of a stress in the mask layer has a first value; and directing a dose of ions into the mask layer, wherein the absolute value of the stress in the mask layer has a second value, less than the first value, after the directing the dose.